公开(公告)号：US20150221663A1

公开(公告)日：2015-08-06

申请号：US14684305

申请日：2015-04-10

申请人： GLOBALFOUNDRIES SINGAPORE PTE.LTD.

发明人： Shyue Seng TAN ,  Yuan SUN

IPC分类号： H01L27/115 ,  H01L29/66 ,  H01L21/28 ,  H01L49/02 ,  H01L29/06 ,  H01L29/10 ,  H01L29/788 ,  H01L29/423

CPC分类号： H01L29/42328 ,  G11C16/0433 ,  H01L27/11558 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881 ,  H01L29/7883 ,  H01L29/7885

摘要： Embodiments of a simple and cost-free multi-time programmable (MTP) structure for non-volatile memory cells are presented. The memory cell includes a substrate, a first transistor having a select gate and a second transistor having a floating gate. The select and floating gates are adjacent to one another and disposed over a transistor well. The transistors include first and second S/D regions disposed adjacent to the sides of the gates. A control gate is disposed over a control well. The control gate is coupled to the floating gate and includes a control capacitor. An erase terminal is decoupled from the control capacitor and transistors.

摘要翻译： 提出了一种用于非易失性存储单元的简单且无成本的多时间可编程（MTP）结构的实施例。 存储单元包括衬底，具有选择栅极的第一晶体管和具有浮置栅极的第二晶体管。 选择和浮置栅极彼此相邻并且设置在晶体管阱上。 晶体管包括邻近栅极侧面设置的第一和第二S / D区域。 控制门设置在控制井上。 控制栅极耦合到浮动栅极并且包括控制电容器。 擦除端子与控制电容和晶体管分离。