公开(公告)号：US20210143254A1

公开(公告)日：2021-05-13

申请号：US16676488

申请日：2019-11-07

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Jiehui SHU ,  Rinus Tek Po LEE ,  Baofu ZHU

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L27/088 ,  H01L21/8234

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to asymmetric source and drain structures and methods of manufacture. The structure includes: at least one gate structure; a straight spacer adjacent to the at least one gate structure; and an L-shaped spacer on a side of the at least one gate structure opposing the straight spacer, the L-shaped spacer extending a first diffusion region further away from the at least one gate structure than the straight spacer extends a second diffusion region on a second side away from the at least one gate structure.