公开(公告)号：US20210384297A1

公开(公告)日：2021-12-09

申请号：US16893855

申请日：2020-06-05

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Henry L. ALDRIDGE, JR. ,  Anthony K. STAMPER ,  Jeonghyun HWANG ,  Johnatan A. KANTAROVSKY

IPC: H01L29/08 ,  H01L29/737 ,  H01L29/417 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a first semiconductor layer including a device region; a second semiconductor layer under the first semiconductor layer; a layer of conductive material between the first semiconductor layer and the second semiconductor layer; at least one contact extending to and contacting the layer of conductive material; and a device in the device region above the layer of conductive material.