公开(公告)号：US11239087B2

公开(公告)日：2022-02-01

申请号：US16662091

申请日：2019-10-24

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Heng Yang ,  David C. Pritchard ,  George J. Kluth ,  Anurag Mittal ,  Hongru Ren ,  Manjunatha G. Prabhu ,  Kai Sun ,  Neha Nayyar ,  Lixia Lei

IPC: H01L27/12 ,  H01L21/308 ,  H01L21/84 ,  H01L29/66 ,  H01L29/78 ,  H01L21/311 ,  H01L21/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.