公开(公告)号：US11031484B2

公开(公告)日：2021-06-08

申请号：US16456268

申请日：2019-06-28

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： George R. Mulfinger ,  Judson R. Holt ,  Mark Raymond

IPC: H01L29/66 ,  H01L27/12 ,  H01L21/84 ,  H01L29/08

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to differential silicide structures and methods of manufacture. The structure includes: a substrate; a gate structure comprising a silicided gate region; and source and drain regions adjacent to the gate structure and comprising S/D silicided regions having a differential thickness compared to the silicided gate region.