公开(公告)号：US20210376106A1

公开(公告)日：2021-12-02

申请号：US17404499

申请日：2021-08-17

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Jiehui SHU ,  Sipeng GU ,  Haiting WANG

IPC: H01L29/49 ,  H01L29/66 ,  H01L27/088 ,  H01L29/78 ,  H01L29/40

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to gate structures and methods of manufacture. The method includes: forming a first gate structure and a second gate structure with gate materials; etching the gate materials within the second gate structure to form a trench; and depositing a conductive material within the trench so that the second gate structure has a metal composition different than the first gate structure.

公开(公告)号：US20210242317A1

公开(公告)日：2021-08-05

申请号：US16777531

申请日：2020-01-30

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Sipeng GU ,  Jiehui SHU ,  Haiting WANG ,  Yanping SHEN

IPC: H01L29/417 ,  H01L29/78

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to self-aligned contacts and methods of manufacture. The structure includes: adjacent diffusion regions located within a substrate material; sidewall structures above an upper surface of the substrate material, aligned on sides of the adjacent diffusion regions; and a contact between the sidewall structures and extending to within the substrate material between and in electrical contact with the adjacent diffusion regions.