公开(公告)号：US20210234034A1

公开(公告)日：2021-07-29

申请号：US16751779

申请日：2020-01-24

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Yanping SHEN ,  Haiting WANG ,  Hong YU

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/16

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a scheme of active and dummy fin structures and methods of manufacture. The structure includes: an active fin structure; at least one dummy fin structure running along at least one side of the active fin structure along its length; a fin cut separating the at least one dummy fin structure along its longitudinal axes; and a gate structure extending over the active fin structure and the fin cut.

公开(公告)号：US20210242317A1

公开(公告)日：2021-08-05

申请号：US16777531

申请日：2020-01-30

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Sipeng GU ,  Jiehui SHU ,  Haiting WANG ,  Yanping SHEN

IPC: H01L29/417 ,  H01L29/78

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to self-aligned contacts and methods of manufacture. The structure includes: adjacent diffusion regions located within a substrate material; sidewall structures above an upper surface of the substrate material, aligned on sides of the adjacent diffusion regions; and a contact between the sidewall structures and extending to within the substrate material between and in electrical contact with the adjacent diffusion regions.