公开(公告)号：US20220230955A1

公开(公告)日：2022-07-21

申请号：US17151346

申请日：2021-01-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alamgir M. Arif ,  Sunil K. Singh ,  Dewei Xu ,  Seung-Yeop Kook ,  Roderick A. Augur

IPC: H01L23/522 ,  H01L49/02

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure. With capacitor electrodes in different ILD layers. The structure includes a first inter-level dielectric (ILD) layer having a top surface, a first vertical electrode within the first ILD layer, a capacitor dielectric film on a top surface of the first vertical electrode, a second ILD layer over the first ILD layer, and a second vertical electrode within the second ILD layer and on the capacitor dielectric film. The capacitor dielectric film is vertically between the first vertical electrode and the second vertical electrode.

公开(公告)号：US11699650B2

公开(公告)日：2023-07-11

申请号：US17151346

申请日：2021-01-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alamgir M. Arif ,  Sunil K. Singh ,  Dewei Xu ,  Seung-Yeop Kook ,  Roderick A. Augur

IPC: H01L23/522 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L23/5226 ,  H01L28/60

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure. With capacitor electrodes in different ILD layers. The structure includes a first inter-level dielectric (ILD) layer having a top surface, a first vertical electrode within the first ILD layer, a capacitor dielectric film on a top surface of the first vertical electrode, a second ILD layer over the first ILD layer, and a second vertical electrode within the second ILD layer and on the capacitor dielectric film. The capacitor dielectric film is vertically between the first vertical electrode and the second vertical electrode.