公开(公告)号：US11315825B2

公开(公告)日：2022-04-26

申请号：US16553737

申请日：2019-08-28

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Michel J. Abou-Khalil ,  Aaron Vallett ,  Steven M. Shank ,  Bojidha Babu ,  John J. Ellis-Monaghan ,  Anthony K. Stamper

IPC: H01L21/762 ,  H01L29/06 ,  H01L21/265 ,  H01L21/324

Abstract: Structures including electrical isolation and methods associated with forming such structures. A semiconductor layer has a top surface, a polycrystalline region, and a single-crystal region between the polycrystalline region and the top surface. An isolation band is located beneath the single-crystal region. The isolation band contains a first concentration of an n-type dopant and a second concentration of a p-type dopant, and a net difference between the first concentration and the second concentration is within a range of about five percent to about fifteen percent.

公开(公告)号：US11322357B2

公开(公告)日：2022-05-03

申请号：US16806383

申请日：2020-03-02

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Siva P. Adusumilli ,  Anthony K. Stamper ,  Michel J. Abou-Khalil ,  John J. Ellis-Monaghan ,  Bojidha Babu

IPC: H01L21/265 ,  H01L21/762 ,  H01L21/324 ,  H01L29/04

Abstract: Structures including electrical isolation and methods of forming a structure including electrical isolation. A first polycrystalline layer is located in a substrate, and a second polycrystalline layer is positioned between the first polycrystalline layer and a top surface of the substrate. The substrate includes a first portion of the single-crystal semiconductor material that is positioned between the second polycrystalline layer and the top surface of the substrate. The substrate includes a second portion of the single-crystal semiconductor material that is positioned between the first polycrystalline layer and the second polycrystalline layer. The first polycrystalline layer has a thickness. The second polycrystalline layer has a portion with a thickness that is greater than the thickness of the first polycrystalline layer.

公开(公告)号：US20210272812A1

公开(公告)日：2021-09-02

申请号：US16806383

申请日：2020-03-02

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Siva P. Adusumilli ,  Anthony K. Stamper ,  Michel J. Abou-Khalil ,  John J. Ellis-Monaghan ,  Bojidha Babu

IPC: H01L21/265 ,  H01L29/04 ,  H01L21/324 ,  H01L21/762

Abstract: Structures including electrical isolation and methods of forming a structure including electrical isolation. A first polycrystalline layer is located in a substrate, and a second polycrystalline layer is positioned between the first polycrystalline layer and a top surface of the substrate. The substrate includes a first portion of the single-crystal semiconductor material that is positioned between the second polycrystalline layer and the top surface of the substrate. The substrate includes a second portion of the single-crystal semiconductor material that is positioned between the first polycrystalline layer and the second polycrystalline layer. The first polycrystalline layer has a thickness. The second polycrystalline layer has a portion with a thickness that is greater than the thickness of the first polycrystalline layer.