公开(公告)号：US10923579B2

公开(公告)日：2021-02-16

申请号：US16854552

申请日：2020-04-21

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hans-Juergen Thees ,  Peter Baars ,  Elliot John Smith

IPC: H01L21/762 ,  H01L29/66 ,  H01L29/49 ,  H01L29/786 ,  H01L29/423 ,  H01L21/285 ,  H01L27/12 ,  H01L21/306 ,  H01L21/308 ,  H01L21/8238 ,  H01L21/8234

Abstract: A device including an SOI substrate and an isolation structure positioned at least partially in a trench that extends through a buried insulation layer and into a semiconductor bulk substrate of the SOI substrate is disclosed. The isolation structure includes a first dielectric layer positioned in a lower portion of the trench, a first material layer positioned above the first dielectric layer, the first material layer having a material different from a material of the first dielectric layer, and a second dielectric layer positioned above the first material layer, the second dielectric layer having a material different from the material of the first material layer.

公开(公告)号：US11031406B2

公开(公告)日：2021-06-08

申请号：US16416477

申请日：2019-05-20

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Elliot John Smith ,  Gunter Grasshoff ,  Carsten Peters

IPC: H01L27/092 ,  H01L27/11 ,  H01L21/02 ,  H01L21/311

Abstract: A semiconductor device includes a first transistor element having a first channel region and a second transistor element having a second channel region, wherein the first channel region includes a first crystalline silicon/germanium (Si/Ge) material mixture having a first germanium concentration, and wherein the second channel region includes a second crystalline Si/Ge material mixture having a second germanium concentration that is higher than the first germanium concentration.