公开(公告)号：US11031406B2

公开(公告)日：2021-06-08

申请号：US16416477

申请日：2019-05-20

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Elliot John Smith ,  Gunter Grasshoff ,  Carsten Peters

IPC: H01L27/092 ,  H01L27/11 ,  H01L21/02 ,  H01L21/311

Abstract: A semiconductor device includes a first transistor element having a first channel region and a second transistor element having a second channel region, wherein the first channel region includes a first crystalline silicon/germanium (Si/Ge) material mixture having a first germanium concentration, and wherein the second channel region includes a second crystalline Si/Ge material mixture having a second germanium concentration that is higher than the first germanium concentration.