公开(公告)号：US11825663B2

公开(公告)日：2023-11-21

申请号：US17403880

申请日：2021-08-17

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Johannes Müller ,  Thomas Melde ,  Stefan Dünkel ,  Ralf Richter

IPC: H10B53/30 ,  G11C11/22 ,  H10B53/10

CPC classification number: H10B53/30 ,  G11C11/221 ,  G11C11/2275 ,  H10B53/10

Abstract: A nonvolatile memory device is provided, the device comprising a ferroelectric memory capacitor arranged over a first active region contact of a first transistor and a gate contact of a second transistor, whereby the ferroelectric memory capacitor at least partially overlaps a gate of the first transistor.