公开(公告)号：US11101364B2

公开(公告)日：2021-08-24

申请号：US16296769

申请日：2019-03-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： George R. Mulfinger ,  Hong Yu ,  Man Gu ,  Jianwei Peng ,  Michael Aquilino

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/311

Abstract: Structures for a field-effect transistor and methods of forming a field-effect transistor. A gate structure of the field-effect transistor is arranged over an active region comprised of a semiconductor material. A first sidewall spacer is arranged adjacent to the gate structure. A second sidewall spacer includes a section arranged between the first sidewall spacer and the active region. The first sidewall spacer is composed of a low-k dielectric material.