公开(公告)号：US11444149B1

公开(公告)日：2022-09-13

申请号：US17182415

申请日：2021-02-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Siva P. Adusumilli ,  Steven M. Shank ,  Yves T. Ngu ,  Mickey H. Yu

IPC: H01L27/12 ,  H01L27/06 ,  H01L49/02 ,  H01L27/08

Abstract: A resistor includes at least one polysilicon resistor element in a semiconductor substrate with each polysilicon resistor element having a continuous U-shape with a continuous lateral bottom. The resistor may include an insulator within a valley of the U-shape of each polysilicon resistor element. A plurality of polysilicon resistor elements can be sequentially interconnected to create a serpentine polysilicon resistor. The resistor may also include a dopant-including high resistivity (HR) polysilicon layer thereunder to provide electrical isolation from, and better thermal conduction to, for example, a base semiconductor substrate. The resistor can be used in an SOI substrate. A related method is also disclosed.

公开(公告)号：US11637173B2

公开(公告)日：2023-04-25

申请号：US17036194

申请日：2020-09-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yves T. Ngu ,  Siva P. Adusumilli ,  Steven M. Shank ,  Michael J. Zierak ,  Mickey H. Yu

IPC: H01L49/02 ,  H01L27/12 ,  H01L21/3215 ,  C30B29/06

Abstract: A structure includes a semiconductor substrate, and a polycrystalline resistor region over the semiconductor substrate. The polycrystalline resistor region includes a semiconductor material in a polycrystalline morphology. A dopant-including polycrystalline region is between the polycrystalline resistor region and the semiconductor substrate.

公开(公告)号：US20220271116A1

公开(公告)日：2022-08-25

申请号：US17182415

申请日：2021-02-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Siva P. Adusumilli ,  Steven M. Shank ,  Yves T. Ngu ,  Mickey H. Yu

IPC: H01L49/02 ,  H01L27/12

Abstract: A resistor includes at least one polysilicon resistor element in a semiconductor substrate with each polysilicon resistor element having a continuous U-shape with a continuous lateral bottom. The resistor may include an insulator within a valley of the U-shape of each polysilicon resistor element. A plurality of polysilicon resistor elements can be sequentially interconnected to create a serpentine polysilicon resistor. The resistor may also include a dopant-including high resistivity (HR) polysilicon layer thereunder to provide electrical isolation from, and better thermal conduction to, for example, a base semiconductor substrate. The resistor can be used in an SOI substrate. A related method is also disclosed.