公开(公告)号：US11011604B2

公开(公告)日：2021-05-18

申请号：US16437440

申请日：2019-06-11

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hui Zang ,  Min-Hwa Chi

IPC: H01L29/08 ,  H01L27/088 ,  H01L21/768 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L21/8234

Abstract: A device includes a first gate structure positioned above an active region defined in a semiconducting substrate. A first spacer is positioned adjacent the first gate structure. First conductive source/drain contact structures are positioned adjacent the first gate structure and separated from the first gate structure by the first spacer. A first recessed portion of the first conductive source/drain contact structures is positioned at a first axial position along the first gate structure. A second recessed portion of the first conductive source/drain contact structures is positioned at a second axial position along the gate structure. A dielectric cap layer is positioned above the first and second recessed portions. A first conductive contact contacts the first gate structure in the first axial position. The dielectric cap layer above the first recessed portion is positioned adjacent the first conductive contact.