公开(公告)号：US20210083095A1

公开(公告)日：2021-03-18

申请号：US16568591

申请日：2019-09-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ming-Cheng Chang ,  Nigel Chan

IPC: H01L29/788 ,  H01L29/78 ,  H01L29/08 ,  H01L23/528 ,  H01L29/45 ,  H01L29/66 ,  H01L21/02

Abstract: Structures for an extended-drain field-effect transistor and methods of forming an extended-drain field-effect transistor. A source region is coupled to a semiconductor layer, a drain region is coupled to the semiconductor layer, and a first gate structure is positioned over a channel region of the semiconductor layer. An extended drain region is positioned between the channel region and the drain region. The extended drain region includes a portion of the semiconductor layer between the first gate structure and the drain region. A second gate structure is arranged over the portion of the semiconductor layer.

公开(公告)号：US11127860B2

公开(公告)日：2021-09-21

申请号：US16568591

申请日：2019-09-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ming-Cheng Chang ,  Nigel Chan

IPC: H01L29/788 ,  H01L29/08 ,  H01L23/528 ,  H01L29/45 ,  H01L29/66 ,  H01L21/02 ,  H01L29/78 ,  H01L21/266 ,  H01L21/265 ,  H01L29/36 ,  H01L29/49 ,  H01L21/28

Abstract: Structures for an extended-drain field-effect transistor and methods of forming an extended-drain field-effect transistor. A source region is coupled to a semiconductor layer, a drain region is coupled to the semiconductor layer, and a first gate structure is positioned over a channel region of the semiconductor layer. An extended drain region is positioned between the channel region and the drain region. The extended drain region includes a portion of the semiconductor layer between the first gate structure and the drain region. A second gate structure is arranged over the portion of the semiconductor layer.