中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

3 records (took 0.01 seconds)

    SWITCH WITH BACK GATE-CONNECTED COMPENSATION CAPACITORS
    1.
    发明公开
    SWITCH WITH BACK GATE-CONNECTED COMPENSATION CAPACITORS 审中-公开

    公开(公告)号：US20240267042A1

    公开(公告)日：2024-08-08

    申请号：US18158572

    申请日：2023-01-24

    Applicant: GlobalFoundries U.S. Inc.

    Inventor： Thomas G. McKay ,  Gail B. Katzman

    IPC: H03K17/16 ,  H03K3/012

    CPC classification number: H03K17/161 ,  H03K3/012

    Abstract: A disclosed structure (e.g., a switch circuit) includes multiple transistors (e.g., on triple wells) connected in series between a first and second nodes. Each transistor can include a primary gate (e.g., a front gate) for controlling the ON/OFF state of the transistor and a secondary gate (e.g., a back gate) for adjusting the VT of the transistor. The switch circuit further includes multiple capacitors (e.g., APMOM capacitors on triple wells), each connected to the second node and to the secondary gate of a corresponding one of the transistors. In advanced semiconductor-on-insulator processing technology platforms, each secondary gate includes a well region within a semiconductor substrate and a corresponding section of an insulator layer, which is on the semiconductor substrate and adjacent to an active device region for the transistor. The capacitors are preselected during design and different capacitances for limiting parasitic secondary gate-to-substrate coupling. Also disclosed are associated methods.

Patent Agency Ranking