公开(公告)号：US10950692B2

公开(公告)日：2021-03-16

申请号：US16121058

申请日：2018-09-04

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ruilong Xie ,  Vimal Kamineni ,  Shesh Mani Pandey ,  Hui Zang

IPC: H01L23/532 ,  H01L29/06 ,  H01L27/088 ,  H01L21/768 ,  H01L21/764 ,  H01L21/8234

Abstract: One device disclosed herein includes, among other things, first and second active regions, a first source/drain contact positioned above the first active region, a second source/drain contact positioned above the second active region, and a dielectric material disposed between the first and second source/drain contacts, wherein the dielectric material defines an air gap cavity positioned between the first and second source/drain contacts.