公开(公告)号：US20170041719A1

公开(公告)日：2017-02-09

申请号：US15305089

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： Quanbo ZOU ,  Zhe WANG ,  Jifang TAO ,  Guanxun QIU

IPC: H04R19/02 ,  B81C1/00 ,  B81B7/00 ,  H04R31/00

CPC classification number: H04R19/02 ,  B81B7/008 ,  B81B2201/0257 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/0197 ,  H04R7/06 ,  H04R19/013 ,  H04R31/00 ,  H04R31/003 ,  H04R2201/003 ,  H04R2307/025 ,  H04R2307/027

Abstract: The present invention provides a method for manufacturing a thermal bimorph diaphragm and a MEMS speaker with thermal bimorphs, wherein the method comprises the steps of: thermally oxidizing a substrate to obtain an insulating layer thereon and providing a metal layer on the insulating layer; providing a sacrificial layer on the metal layer; providing a first thermal bimorph layer on the sacrificial layer; providing a second thermal bimorph layer on the first thermal bimorph layer; providing a metal connecting layer at the positions on the metal layer where the sacrificial layer is not provided; forming corresponding back holes on the substrate and the insulating layer and releasing the sacrificial layer; forming the thermal bimorph diaphragm which is warped with the first thermal bimorph layer and the second thermal bimorph layer after the sacrificial layer is released.

Abstract translation: 本发明提供了一种制造具有热双压电晶片的热双压电晶片和MEMS扬声器的方法，其中该方法包括以下步骤：对衬底进行热氧化以在其上获得绝缘层并在绝缘层上提供金属层; 在所述金属层上提供牺牲层; 在牺牲层上提供第一热双压电晶片; 在第一热双压电晶片层上提供第二热双压电晶片层; 在不设置牺牲层的金属层上的位置提供金属连接层; 在基板和绝缘层上形成相应的后孔并释放牺牲层; 在牺牲层被释放之后形成与第一热双压电晶片层和第二热双压电晶片层翘曲的热双压电晶片。