公开(公告)号：US20210135044A1

公开(公告)日：2021-05-06

申请号：US16605081

申请日：2017-04-19

Applicant: GOERTEK INC.

Inventor： Quanbo ZOU ,  Xiaoyang ZHANG ,  Peixuan CHEN ,  Xiangxu FENG ,  Tao GAN ,  Zhe WANG

IPC: H01L33/00 ,  H01L25/075

Abstract: It is disclosed a micro-LED transfer method, manufacturing method and display device. The method for transferring a micro-LED array comprises: patterning conductive resist on a receiving substrate to cover electrodes for the micro-LED array to be transferred; bonding the micro-LED array on a first substrate with the receiving substrate through the conductive resist, wherein the first substrate is laser transparent; irradiating laser onto the micro-LED array from a side of the first substrate to lift-off the micro-LED array from the first substrate. According to an embodiment, the performance of a micro-LED device may be improved.

公开(公告)号：US20200075560A1

公开(公告)日：2020-03-05

申请号：US16609269

申请日：2017-06-15

Applicant: GOERTEK INC.

Inventor： Quanbo ZOU ,  Peixuan CHEN

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/00

Abstract: A method for transferring micro-light emitting diodes, a micro-light emitting diode device and an electronic device. The method for transferring micro-light emitting diodes comprises: providing bumps of bonding agent on electrode bonding pads of a receiving substrate and/or on micro-light emitting diodes of an original substrate; aligning and contacting the electrode bonding pads of the receiving substrate and the micro-light emitting diodes of the original substrate, to position the bumps of bonding agent between the micro-light emitting diodes and the electrode bonding pads; irradiating locally by using a first laser from the original substrate side, to melt the bumps of bonding agent to bond the micro-light emitting diodes and the electrode bonding pads; and stripping off the micro-light emitting diodes from the original substrate, to transfer the micro-light emitting diodes to the receiving substrate.

公开(公告)号：US20190297427A1

公开(公告)日：2019-09-26

申请号：US16316527

申请日：2016-07-11

Applicant: GOERTEK INC.

Inventor： Quanbo ZOU

IPC: H04R17/02

Abstract: The present invention discloses a MEMS microphone and an electronic apparatus. The MEMS microphone comprises: a pressure sensing element, for sensing pressure applied thereon; a diaphragm attached to the pressure sensing element and applying pressure to the pressure sensing element; and a backbone attached to the pressure sensing element and supporting the pressure sensing element.

公开(公告)号：US20210013368A1

公开(公告)日：2021-01-14

申请号：US16088564

申请日：2017-12-19

Applicant: Goertek Inc.

Inventor： Xiangxu FENG ,  Peixuan CHEN ,  Quanbo ZOU

IPC: H01L33/00 ,  H01L33/62

Abstract: The present disclosure discloses a micro-LED transfer method, a manufacturing method, device and an electronic apparatus. The transfer method comprises: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on a single GaAs original substrate; epitaxially growing bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate. The method can be used to transfer micro-LEDs of a variety of colors, in order to improve the production efficiency.

公开(公告)号：US20200175916A1

公开(公告)日：2020-06-04

申请号：US16615068

申请日：2017-05-31

Applicant: GOERTEK INC.

Inventor： Quanbo ZOU ,  Zhe WANG ,  Xiaoyang ZHANG

IPC: G09G3/3208 ,  H01L27/32 ,  H01L27/12 ,  G02F1/1347

Abstract: An image display device comprises: a thin film transistor backplane (1), and a first resolution display panel (2), a second resolution display panel (4), a display driving chip (3) and an integrated display driver (5), which are fixed on the thin film transistor backplane (1); the display driving chip (3) is electrically connected to bonding pads (111) on the thin film transistor backplane (1), and is provided under the second resolution display panel (4); and the display driving chip (3) is used for driving the second resolution display panel (4); the integrated display driver (5) is used for driving the first resolution display panel (2); and a resolution of the first resolution display panel (2) is lower than a resolution of the second resolution display panel (4). The first resolution display panel (2) is driven by the standard drive manner of thin film transistor display panels, to realize low resolution displaying, and the second resolution display panel (4) is driven by the display driving chip (3), to improve the displaying quality of the display device.

公开(公告)号：US20190267426A1

公开(公告)日：2019-08-29

申请号：US16320019

申请日：2016-08-22

Applicant: GOERTEK INC.

Inventor： Quanbo ZOU ,  Peixuan CHEN ,  Xiangxu FENG

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/60 ,  H01L33/00

Abstract: A micro-LED transfer method, manufacturing method and device are provided. The micro-LED transfer method comprises: obtaining a laser-transparent carrier substrate having a first surface and a second surface with micro-LEDs; forming a protection layer on at least one of the first surface and the second surface and a third surface of a receiving substrate, wherein the third surface is to receive the micro-LEDs to be transferred via pads; bringing the micro-LEDs to be transferred into contact with the pads on the third surface; and irradiating the micro-LEDs to be transferred with laser from the first surface to lift-off the micro-LEDs to be transferred from the carrier substrate, wherein the protection layer is configured to protect the third surface from the irradiation of the laser.

公开(公告)号：US20210136334A1

公开(公告)日：2021-05-06

申请号：US16487246

申请日：2017-03-07

Applicant: GOERTEK INC.

Inventor： Zhe WANG ,  Xiaoyang ZHANG ,  Quanbo ZOU

IPC: H04N9/31

Abstract: The present disclosure provides a laser projection device and a laser projection system. The laser projection device includes a light source scanner and a MEMS scanning mirror, the light source scanner including micro laser diodes; and the micro laser diodes are used to provide laser beams needed for image projection, and the laser beams are projected to the MEMS scanning mirror, and then reflected by the MEMS scanning mirror to a predetermined area to form a projection image. By providing the micro laser diodes in the laser projection device and initiatively emitting laser by exciting the micro laser diodes, the present disclosure does not need an external laser source and facilitates the reduction of the size of the laser projection device, as compared with the prior art.

公开(公告)号：US20190306629A1

公开(公告)日：2019-10-03

申请号：US16316535

申请日：2016-07-11

Applicant: GOERTEK INC.

Inventor： Quanbo ZOU

IPC: H04R19/00 ,  H04R19/04

Abstract: The present invention discloses a condenser MEMS microphone and an electronic apparatus. The condenser MEMS microphone comprises: a substrate; a bottom plate placed on the substrate; and a top plate placed above the bottom plate and spaced from the bottom plate, wherein the top plate is torsional with respect to a first torsional axis and is divided into a first part and a second part by the first torsional axis, the first part and the second part form two condensers with the bottom plate, and a first group of acoustic holes are provided in the first part of the top plate. According to an embodiment of this invention, a novel condenser MEMS microphone of two layers is provided.

公开(公告)号：US20170041719A1

公开(公告)日：2017-02-09

申请号：US15305089

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： Quanbo ZOU ,  Zhe WANG ,  Jifang TAO ,  Guanxun QIU

IPC: H04R19/02 ,  B81C1/00 ,  B81B7/00 ,  H04R31/00

CPC classification number: H04R19/02 ,  B81B7/008 ,  B81B2201/0257 ,  B81B2201/032 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/0197 ,  H04R7/06 ,  H04R19/013 ,  H04R31/00 ,  H04R31/003 ,  H04R2201/003 ,  H04R2307/025 ,  H04R2307/027

Abstract: The present invention provides a method for manufacturing a thermal bimorph diaphragm and a MEMS speaker with thermal bimorphs, wherein the method comprises the steps of: thermally oxidizing a substrate to obtain an insulating layer thereon and providing a metal layer on the insulating layer; providing a sacrificial layer on the metal layer; providing a first thermal bimorph layer on the sacrificial layer; providing a second thermal bimorph layer on the first thermal bimorph layer; providing a metal connecting layer at the positions on the metal layer where the sacrificial layer is not provided; forming corresponding back holes on the substrate and the insulating layer and releasing the sacrificial layer; forming the thermal bimorph diaphragm which is warped with the first thermal bimorph layer and the second thermal bimorph layer after the sacrificial layer is released.

Abstract translation: 本发明提供了一种制造具有热双压电晶片的热双压电晶片和MEMS扬声器的方法，其中该方法包括以下步骤：对衬底进行热氧化以在其上获得绝缘层并在绝缘层上提供金属层; 在所述金属层上提供牺牲层; 在牺牲层上提供第一热双压电晶片; 在第一热双压电晶片层上提供第二热双压电晶片层; 在不设置牺牲层的金属层上的位置提供金属连接层; 在基板和绝缘层上形成相应的后孔并释放牺牲层; 在牺牲层被释放之后形成与第一热双压电晶片层和第二热双压电晶片层翘曲的热双压电晶片。

公开(公告)号：US20170041717A1

公开(公告)日：2017-02-09

申请号：US15304058

申请日：2014-08-26

Applicant: GOERTEK INC.

Inventor： Quanbo ZOU

IPC: H04R19/00 ,  B81B3/00 ,  B81C1/00 ,  H04R7/14

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00158 ,  H04R7/14 ,  H04R19/02 ,  H04R2201/003

Abstract: The present invention provides a silicon speaker comprising an MEMS acoustoelectric chip and a PCB substrate, wherein the MEMS acoustoelectric chip comprises a corrugated diaphragm on a silicon substrate; and one side surface of the MEMS acoustoelectric chip is metalized, and the metalized side surface of the MEMS acoustoelectric chip is connected with the PCB substrate. The corrugated diaphragm is electrically conductive and interconnected with metal paths on MEMS acoustoelectric chip, which is led out to a first PCB metal path as one electrode. A second PCB metal path below the MEMS chip forms another electrode of the electrostatic actuator. The silicon speaker provided by the present invention lowers manufacturing costs of the speaker, and allows the diaphragm to generate high and repeatable/reliable sound pressure upon large displacements so as to improve the sounding effects of the speaker.

Abstract translation: 本发明提供一种包括MEMS声电芯片和PCB基板的硅扬声器，其中所述MEMS声电芯片包括在硅衬底上的波纹光阑; 并且MEMS声电芯片的一个侧表面被金属化，并且MEMS声电芯片的金属化侧表面与PCB衬底连接。 波纹膜片是导电的并且与MEMS声电芯片上的金属路径互连，其被引导到作为一个电极的第一PCB金属路径。 MEMS芯片下面的第二个PCB金属通道形成静电致动器的另一个电极。 由本发明提供的硅扬声器降低扬声器的制造成本，并且允许隔膜在大位移时产生高可重复/可靠的声压，从而改善扬声器的探测效果。