公开(公告)号：US20180138305A1

公开(公告)日：2018-05-17

申请号：US15412653

申请日：2017-01-23

Applicant: Gpower Semiconductor, Inc.

Inventor： Guangmin DENG ,  Yi PEI

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/51 ,  H01L21/02 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/513 ,  H01L29/7786

Abstract: A semiconductor device comprises: a substrate; a semiconductor layer on the substrate; and a gallium nitride cap layer on the semiconductor layer. The gallium nitride cap layer has a thickness of 3 nm to 5.8 nm.

公开(公告)号：US20220285565A1

公开(公告)日：2022-09-08

申请号：US17632697

申请日：2020-08-05

Applicant: GPOWER SEMICONDUCTOR, INC.

Inventor： Guangmin DENG ,  Yi PEI

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/417

Abstract: The present disclosure discloses a semiconductor device and a method for preparing the same. The semiconductor device includes a substrate, a doped epitaxial layer located on one side of the substrate, a channel layer located on one side of the doped epitaxial layer away from the substrate, a potential barrier layer located on one side of the channel layer away from the doped epitaxial layer, and a first electrode and a second electrode located on one side of the potential barrier layer away from the channel layer, wherein the first electrode penetrates the potential barrier layer, the channel layer and part of the doped epitaxial layer, the first electrode forms a Schottky contact with the channel layer, and a resistance of the part of the doped epitaxial layer in contact with the first electrode is greater than a resistance of the channel layer.