公开(公告)号：US20230282540A1

公开(公告)日：2023-09-07

申请号：US17979970

申请日：2022-11-03

Applicant: GaN Systems Inc.

Inventor： Ruoyu HOU ,  Juncheng LU ,  Andrew DICKSON

IPC: H01L23/367 ,  H01L23/373 ,  H01L25/07 ,  H01L29/20

CPC classification number: H01L23/3672 ,  H01L23/3735 ,  H01L23/3731 ,  H01L25/072 ,  H01L29/2003

Abstract: A multi-zone substrate for a power stage assembly comprising at least one bottom-cooled semiconductor power switching device and driver components, for integration on a common substrate. A first zone provides electrical connections and a thermal pad for mounting at least one bottom-cooled semiconductor switching device, the first zone comprising dielectric and conductive layers which provide a power substrate optimized for thermal performance. A second zone provides electrical connections for mounting driver components, the second zone comprising dielectric and conductive layers providing a driver substrate optimized for electrical performance. For example, the first zone comprises a single layer metal interconnect structure with a first thermal resistance, the second zone comprises a multi-layer metal interconnect structure with a second thermal resistance, the first thermal resistance being less than the second thermal resistance. The power stage assembly may comprise a multi-zone substrate configured for a single switch, half-bridge or full-bridge switch topology.