公开(公告)号：US5512130A

公开(公告)日：1996-04-30

申请号：US209750

申请日：1994-03-09

申请人： Gabriel G. Barna ,  James G. Frank ,  Richard P. VanMeurs ,  Duane E. Carter

发明人： Gabriel G. Barna ,  James G. Frank ,  Richard P. VanMeurs ,  Duane E. Carter

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/32082 ,  H01J37/32706 ,  H01L21/3065 ,  H01J2237/3347

摘要： An etching apparatus (10) includes a process chamber (12) partially surrounded by an upper electrode (14) and a lower electrode (16). A semiconductor material (18) lies within the process chamber (12) and in contact with the lower electrode (16). The lower electrode (16) is connected to a first power supply (22) operating at a substantially high frequency and is also connected to a second power supply (24) operating at a relatively low frequency. The lower frequency of the second power supply (24) provides a degree of anisotropic control to the trench etching process performed on the semiconductor material (18). The added anisotropic control allows for the elimination of sidewall deposition enhancing materials within a plasma chemistry introduced into the process chamber (12) by a gas distributor (20). Without the requirement of a sidewall deposition enhancing material during trench etching of the semiconductor material (18), buildup of residue due to sidewall deposition does not occur within process chamber (12).

摘要翻译： 蚀刻装置（10）包括由上电极（14）和下电极（16）部分包围的处理室（12）。 半导体材料（18）位于处理室（12）内并与下电极（16）接触。 下电极（16）连接到以基本高频工作的第一电源（22），并且还连接到以较低频率工作的第二电源（24）。 第二电源（24）的较低频率为在半导体材料（18）上执行的沟槽蚀刻工艺提供一定程度的各向异性控制。 添加的各向异性控制允许通过气体分配器（20）消除引入处理室（12）的等离子体化学物质中的侧壁沉积增强材料。 在半导体材料（18）的沟槽蚀刻期间不需要侧壁沉积增强材料，在处理室（12）内不会发生由侧壁沉积引起的残留物的积聚。