公开(公告)号：US4301439A

公开(公告)日：1981-11-17

申请号：US972793

申请日：1978-12-26

申请人： Gary W. Johnson ,  David G. Hilson

发明人： Gary W. Johnson ,  David G. Hilson

IPC分类号： H01C7/00 ,  H01C17/24 ,  H01G4/40 ,  H01C10/00

CPC分类号： H01C17/24 ,  Y10T29/49099

摘要： A film type resistor especially suitable for use on planar electronic circuit substrates. The resistor is capable of being adjusted or trimmed to provide resistance values over a substantially wide range. The resistor can also be trimmed while actively functioning in a circuit including one or more other components, so as to provide a desired operating parameter for the circuit.

公开(公告)号：US4350618A

公开(公告)日：1982-09-21

申请号：US94900

申请日：1979-11-16

申请人： David G. Hilson ,  Gary W. Johnson ,  Ronald J. Schoonejongen

发明人： David G. Hilson ,  Gary W. Johnson ,  Ronald J. Schoonejongen

IPC分类号： H01L21/52 ,  H01B1/16 ,  H01L21/48 ,  H01L23/498 ,  H01L27/01 ,  H05K1/09 ,  H01B1/02 ,  C09D5/10 ,  H01L23/48

CPC分类号： H01L23/49883 ,  H01B1/16 ,  H01L21/4867 ,  H01L27/013 ,  H01L2924/0002 ,  H05K1/092

摘要： In a microelectronic package of the type where Si-based integrated circuits are eutectically attached to a Pd/Au-based thick film conductor, a method of reducing the potential for thermal runaway is taught. The method involves increasing the surface area of the Pd to lower the Vbe rating. This reduces the potential for thermal runaway in subsequent integrated circuit operation. It has also been found that increasing the particle size of the Au component further decreases the Vbe rating.

摘要翻译： 在其中基于Si的集成电路共同附着到基于Pd / Au的厚膜导体的类型的微电子封装中，教导了减少热失控的可能性的方法。 该方法包括增加Pd的表面积以降低Vbe等级。 这降低了后续集成电路操作中热失控的可能性。 还已经发现，增加Au成分的粒径进一步降低了Vbe等级。

公开(公告)号：US4187201A

公开(公告)日：1980-02-05

申请号：US886945

申请日：1978-03-15

申请人： David G. Hilson ,  Peter A. Tulipan

发明人： David G. Hilson ,  Peter A. Tulipan

IPC分类号： C04B41/88 ,  C03C8/18 ,  C23C24/08 ,  H01B1/14 ,  H01B1/16 ,  H05K1/09 ,  H01B1/02

CPC分类号： H05K1/092 ,  H01B1/16 ,  Y10T428/31678

摘要： A method of improving the physical characteristics of a conductor paste includes the step of adding ZnO in an amount sufficient to achieve about 1% to 3%, by weight, of the total. Where the conductor paste is adapted to be fired at 850.degree. C., ZnO is added in an amount sufficient to achieve about 2% of the total, and where the conductor paste is adapted to be fired at 985.degree. C., ZnO is added in an amount sufficient to achieve about 3% of the total. Several conductor pastes, based on different conductive metal systems and including ZnO, exhibit unusual and surprisingly beneficial results.

摘要翻译： 改善导体糊料的物理特性的方法包括以足以达到总重量的约1重量％至3重量％的量添加ZnO的步骤。 当导体浆料适于在850℃下烧制时，加入的ZnO的量足以达到总量的约2％，并且其中导体浆料适于在985℃下烧制，加入ZnO 其数量足以达到总数的3％左右。 基于不同导电金属体系和包括ZnO的几种导体糊状物显示出不寻常的和惊人的有益结果。