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公开(公告)号：US5482802A
公开(公告)日：1996-01-09
申请号：US157590
申请日：1993-11-24
CPC分类号： G03F1/74
摘要： The present invention provides a process for locally removing at least a portion of a material layer structure in which first and second materials are provided, the second material having a higher etch rate by an activated reaction gas than the first material. The second material is disposed over at least a portion of the first material. A reaction gas flows adjacent a portion of the second material to be removed. The reaction gas is chemically reactive with at least the second material to form volatile reaction products when activated by a focused particle beam, but does not spontaneously react with the second material.The portion of the second material to be removed is irradiated with a focused particle beam. Exemplary particle beams are focused ion beams and electron beams. The focused particle beam initiates a chemical reaction between the portion of the second material and the reaction gas, forming volatile reaction products which desorb from the substrate and are removed. This technique finds particular application for removal of opaque defects on tungsten absorber x-ray masks.
摘要翻译： 本发明提供了一种用于局部去除其中提供第一和第二材料的材料层结构的至少一部分的方法，所述第二材料具有比第一材料更高的通过活化反应气体的蚀刻速率。 第二材料设置在第一材料的至少一部分上。 反应气体邻近待除去的第二材料的一部分流动。 反应气体与至少第二种材料发生化学反应，以在被聚焦的粒子束激活时形成挥发性反应产物，但不会与第二种材料自发反应。 被去除的第二材料的部分被聚焦的粒子束照射。 示例性的粒子束是聚焦离子束和电子束。 聚焦的粒子束引发第二材料的部分与反应气体之间的化学反应，形成从衬底脱附并被去除的挥发性反应产物。 该技术特别适用于去除钨吸收体x射线掩模上的不透明缺陷。
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公开(公告)号：US5620573A
公开(公告)日：1997-04-15
申请号：US431355
申请日：1995-04-28
CPC分类号： G03F1/22
摘要： X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low and uniform stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited. The stress gradients in the film are further reduced by transferring heat from the membrane as the metal is deposited thereon.
摘要翻译： 通常通过在薄的支撑膜上沉积和图案化重金属层来制造X射线掩模。 金属层必须具有相对较低且均匀的应力以防止图案的应力引起的变形。 通过采用连续操作的基于电容的测量技术来产生具有优异应力特性的钨膜，以便能够快速响应沉积膜的应力变化来调节沉积条件。 当金属沉积在膜上时，通过从膜传递热量来进一步降低膜中的应力梯度。
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公开(公告)号：US5382340A
公开(公告)日：1995-01-17
申请号：US166672
申请日：1993-12-14
IPC分类号： G01L1/14 , C23C14/54 , G01H13/00 , G03F1/22 , H01L21/027 , H01L21/30 , H01L21/66 , C23C14/34
摘要： X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited.
摘要翻译： 通常通过在薄的支撑膜上沉积和图案化重金属层来制造X射线掩模。 金属层必须具有相对低的应力以防止图案的应力引起的变形。 通过采用连续操作的基于电容的测量技术来产生具有优异应力特性的钨膜，以便能够快速响应沉积膜的应力变化来调节沉积条件。
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公开(公告)号：US5480529A
公开(公告)日：1996-01-02
申请号：US340515
申请日：1994-11-16
IPC分类号： G01L1/14 , C23C14/54 , G01H13/00 , G03F1/22 , H01L21/027 , H01L21/30 , H01L21/66 , C23C14/34
摘要： X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited.
摘要翻译： 通常通过在薄的支撑膜上沉积和图案化重金属层来制造X射线掩模。 金属层必须具有相对低的应力以防止图案的应力引起的变形。 通过采用连续操作的基于电容的测量技术来产生具有优异应力特性的钨膜，以便能够快速响应沉积膜的应力变化来调节沉积条件。
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