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公开(公告)号:US06825116B2
公开(公告)日:2004-11-30
申请号:US09845405
申请日:2001-04-30
申请人: Gerhard Beitel , Mattias Ahlstedt , Walter Hartner , Günther Schindler , Marcus Kastner , Volker Weinrich
发明人: Gerhard Beitel , Mattias Ahlstedt , Walter Hartner , Günther Schindler , Marcus Kastner , Volker Weinrich
IPC分类号: H01L21302
CPC分类号: H01L28/55 , H01L21/31053 , H01L21/3212 , H01L27/10811 , H01L27/11507
摘要: A method for removing structures from a substrate is described. The method includes providing a substrate that has the structures that must be removed, applying a sacrifice layer, and removing the structures and the sacrifice layer in a polishing step. The method has the advantage that the sacrifice layer surrounds the structures that must be removed and stabilizes them, so that the structures can be eroded slowly and successively in the subsequent polishing step without breaking off. This prevents a smearing of the material of the structures such as occurs given direct polishing without a sacrifice layer.
摘要翻译: 描述了从衬底去除结构的方法。 该方法包括提供具有必须去除的结构的基底,施加牺牲层,以及在抛光步骤中去除结构和牺牲层。 该方法的优点在于,牺牲层围绕必须被去除和稳定的结构,从而可以在随后的抛光步骤中缓慢且连续地腐蚀结构而不会断裂。 这样可以防止结构材料的污染,例如直接抛光而没有牺牲层。
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公开(公告)号:US06503792B2
公开(公告)日:2003-01-07
申请号:US09750531
申请日:2000-12-28
IPC分类号: H01L218242
CPC分类号: H01L28/55 , H01L21/3105 , H01L21/31122 , H01L21/32136 , H01L28/60
摘要: The damage to edge sections which occurs during the patterning of a metal-oxide-containing layer can be compensated by the deposition of an annealing layer and a subsequent heat treatment step through which a material flow takes place from the annealing layer into the damaged edge sections. The metal-oxide-containing layer can form the dielectric of a storage capacitor of a DRAM memory cell.
摘要翻译: 在含金属氧化物层的图案化期间发生的对边缘部分的损伤可以通过沉积退火层和随后的热处理步骤来补偿,通过该步骤将材料流从退火层发生到损坏的边缘部分 。 含金属氧化物的层可以形成DRAM存储单元的存储电容器的电介质。
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