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    Impedance matching circuit for inductively coupled plasma source
    1.
    发明授权
    Impedance matching circuit for inductively coupled plasma source 失效
    用于电感耦合等离子体源的阻抗匹配电路

    公开(公告)号：US06770836B2

    公开(公告)日：2004-08-03

    申请号：US10100983

    申请日：2002-03-19

    申请人： Gi-Chung Kwon ,  Hong-Sik Byun ,  Sung-Weon Lee ,  Hong-Seub Kim ,  Sun-Seok Han ,  Bu-Jin Ko ,  Joung-Sik Kim

    发明人： Gi-Chung Kwon ,  Hong-Sik Byun ,  Sung-Weon Lee ,  Hong-Seub Kim ,  Sun-Seok Han ,  Bu-Jin Ko ,  Joung-Sik Kim

    IPC分类号： B23K1000

    CPC分类号： H01J37/321 ,  H01J37/32183 ,  H05H1/46

    摘要： An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.

    摘要翻译： 一种用于等离子体源的阻抗匹配电路包括：第一网络，包括：第一线圈; 以及向所述第一线圈施加第一电压的RF电源; 和第二网络; 接地的第二线圈具有第二电压，第二电压低于第一电压; 第一和第二无功元件，第一和第二无功元件的一个端部分别连接到第二线圈的每个端部; 以及连接到第一和第二无功元件的另一端部的负载，负载的两个端部处的相位彼此不同。

    Plasma process chamber monitoring method and system used therefor
    3.
    发明授权
    Plasma process chamber monitoring method and system used therefor 有权
    等离子体处理室监测方法及其使用的系统

    公开(公告)号：US06768269B2

    公开(公告)日：2004-07-27

    申请号：US10288129

    申请日：2002-11-04

    申请人： Gi-Chung Kwon ,  Hong-Sik Byun ,  Young-Suk Lee

    发明人： Gi-Chung Kwon ,  Hong-Sik Byun ,  Young-Suk Lee

    IPC分类号： H01J724

    CPC分类号： H01J37/32935

    摘要： A plasma process chamber is monitored for excess current while fabricating a semiconductor device. The method includes grounding the plasma process chamber in which fabricating a semiconductor device is conducted using a plasma; detecting a current flowing in a ground line from the plasma process chamber to the ground; interpreting whether the detected current is more than a reference value during fabricating the semiconductor device; and deciding that the plasma process chamber is in an abnormal state when the detected current is more than the reference value. It is thereby possible to produce more stable plasma and the operation of the plasma process chamber is stabilized. Further, the expected life span of the plasma process chamber and other devices is enlarged, and the risk of injuring the operator is prevented.

    摘要翻译： 在制造半导体器件的同时监测等离子体处理室的过电流。 该方法包括使用等离子体接地制造半导体器件的等离子体处理室; 检测从等离子体处理室到地面的在地线中流动的电流; 解释在制造半导体器件期间检测到的电流是否大于参考值; 并且当检测到的电流大于参考值时，判定等离子体处理室处于异常状态。 从而可以产生更稳定的等离子体，并且等离子体处理室的操作是稳定的。 此外，等离子体处理室和其他装置的预期寿命被扩大，并且防止了操作者受伤的风险。