公开(公告)号：US08586396B2

公开(公告)日：2013-11-19

申请号：US12670774

申请日：2008-07-23

申请人： Giso Hahn ,  Helge Haverkamp ,  Bernd Raabe ,  Amir Dastgheib-Shirazi ,  Felix Book

发明人： Giso Hahn ,  Helge Haverkamp ,  Bernd Raabe ,  Amir Dastgheib-Shirazi ,  Felix Book

IPC分类号： H01L21/00

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidized. This oxidized porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present. The method makes use of conventional screen-printing and etching technologies and is thus compatible with current industrial production plants.

摘要翻译： 提出了一种用于制造具有背蚀刻发射体的硅太阳能电池的方法，优选地具有选择性发射极和相应的太阳能电池。 根据一个方面，该方法包括以下方法步骤：在太阳能电池基板的发射极表面处产生二维延伸的发射极; 在所述发射器表面的第一部分区域上施加蚀刻阻挡层; 在未被蚀刻阻挡层覆盖的发射器表面的第二部分区域中蚀刻发射体表面; 去除蚀刻屏障; 并在第一部分区域产生金属接触。 在该方法期间，特别是在蚀刻第二部分区域中的发射极表面期间，有利地产生多孔硅层，然后氧化。 随后可以将氧化的多孔硅层与可能存在的任何磷玻璃一起蚀刻掉。 该方法利用传统的丝网印刷和蚀刻技术，因此与目前的工业生产工厂相兼容。

公开(公告)号：US20100218826A1

公开(公告)日：2010-09-02

申请号：US12670774

申请日：2008-07-23

申请人： Giso Hahn ,  Helge Haverkamp ,  Bernd Raabe ,  Amir Dastgheib-Shirazi ,  Felix Book

发明人： Giso Hahn ,  Helge Haverkamp ,  Bernd Raabe ,  Amir Dastgheib-Shirazi ,  Felix Book

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： A method is presented for producing a silicon solar cell with a back-etched emitter preferably with a selective emitter and a corresponding solar cell. According to one aspect, the method comprises the following method steps: producing a two-dimensionally extending emitter at an emitter surface of a solar cell substrate; applying an etching barrier onto first partial zones of the emitter surface; etching the emitter surface in second partial zones of the emitter surface not covered by the etching barrier; removing the etching barrier; and producing metal contacts at the first partial zones. During the method, especially during the etching of the emitter surface in the second partial zones, a porous silicon layer is advantageously produced, which is then oxidised. This oxidised porous silicon layer can subsequently be etched away together with any phosphorus glass that may be present. The method makes use of conventional screen-printing and etching technologies and is thus compatible with current industrial production plants.

摘要翻译： 提出了一种用于制造具有背蚀刻发射体的硅太阳能电池的方法，优选地具有选择性发射极和相应的太阳能电池。 根据一个方面，该方法包括以下方法步骤：在太阳能电池基板的发射极表面处产生二维延伸的发射极; 在所述发射器表面的第一部分区域上施加蚀刻阻挡层; 在未被蚀刻阻挡层覆盖的发射器表面的第二部分区域中蚀刻发射体表面; 去除蚀刻屏障; 并在第一部分区域产生金属接触。 在该方法期间，特别是在蚀刻第二部分区域中的发射极表面期间，有利地产生多孔硅层，然后将其氧化。 随后可以将氧化的多孔硅层与可能存在的任何磷玻璃一起蚀刻掉。 该方法利用传统的丝网印刷和蚀刻技术，因此与目前的工业生产工厂相兼容。

公开(公告)号：US20120129355A1

公开(公告)日：2012-05-24

申请号：US13322540

申请日：2010-05-20

申请人： Giso Hahn ,  Helge Haverkamp ,  Jose Nestor Ximello-Quiebras

发明人： Giso Hahn ,  Helge Haverkamp ,  Jose Nestor Ximello-Quiebras

IPC分类号： H01L21/306

CPC分类号： H01L21/67086 ,  H01L31/02363 ,  H01L31/18 ,  Y02E10/50

摘要： A method for texturing a surface of a semiconductor substrate is proposed. Therein, the surface is etched with an etching solution which etches the semiconductor substrate material, wherein a wetting agent is added to the etching solution, which wetting agent contains water-soluble polymers, in particular in the form of polyvinyl alcohol. Therein, the process temperatures of the etching solution can be increased in comparison to conventional texturing methods, as a result of which the process time can be reduced. Process guidance is simplified and process stability is increased. A suitable texturing device for carrying out the method can, in addition to a basin for accommodating the etching solution and a heater for heating the etching solution to at least 85° C., furthermore have an optionally heatable emptying device for emptying the etching solution out of the basin, a removal device for removing crystallised water-soluble polymers from the etching solution and a circulation device for circulating the etching solution.

摘要翻译： 提出了一种用于纹理化半导体衬底的表面的方法。 其中，用蚀刻半导体衬底材料的蚀刻溶液蚀刻表面，其中将润湿剂添加到蚀刻溶液中，该润湿剂含有水溶性聚合物，特别是聚乙烯醇的形式。 其中，与传统的纹理方法相比，蚀刻溶液的工艺温度可以提高，结果可以减少处理时间。 流程引导简化，工艺稳定性提高。 用于实施该方法的合适的纹理装置除了用于容纳蚀刻溶液的盆和用于将蚀刻溶液加热至至少85℃的加热器之外，还可以具有用于将蚀刻溶液排出的任选可加热的排空装置 的用于从蚀刻溶液中除去结晶水溶性聚合物的去除装置和用于使蚀刻溶液循环的循环装置。

公开(公告)号：US20120204946A1

公开(公告)日：2012-08-16

申请号：US13371139

申请日：2012-02-10

申请人： Helge Haverkamp ,  Petra Mitzinneck ,  Kay Kieninger ,  Jurgen Sollner

发明人： Helge Haverkamp ,  Petra Mitzinneck ,  Kay Kieninger ,  Jurgen Sollner

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022425 ,  Y02E10/50

摘要： In a method for producing a front-side emitter electrode as front contact for a silicon solar cell on a silicon wafer, a depression is produced in the front side of said silicon wafer. A front-side n-doped silicon layer and an antireflection layer are then produced. A paste is then introduced into the depression, said paste containing electrically conductive metal particles and etching glass frit. Said paste, as a result of momentary heating, etches through the antireflection layer to the n-doped silicon layer making electrical contact with the latter. Afterwards, electrically conductive front contact metal is galvanically attached as front contact onto the heat-treated paste in the depression.

摘要翻译： 作为在硅晶片上的硅太阳能电池的正面接触的前侧发射电极的制造方法，在所述硅晶片的前侧产生凹陷。 然后制造前侧n掺杂硅层和抗反射层。 然后将糊剂引入凹陷中，所述糊剂含有导电金属颗粒并蚀刻玻璃料。 所述糊料作为瞬时加热的结果，通过防反射层蚀刻到与掺杂硅层电接触的n掺杂硅层。 之后，将导电性前接触金属作为前触点电连接到凹陷处的热处理糊料上。