公开(公告)号：US4502060A

公开(公告)日：1985-02-26

申请号：US490683

申请日：1983-05-02

申请人： Glenn H. Rankin ,  Harold W. Levie

发明人： Glenn H. Rankin ,  Harold W. Levie

IPC分类号： B41J2/05 ,  B41J2/14 ,  G01D15/18

CPC分类号： B41J2/1404 ,  B41J2002/14387 ,  B41J2002/14467

摘要： A thermal ink jet print head is provided having a new and improved barrier design. Two barriers are provided for each resistor, the barriers partially surrounding the resistor. The barriers are spaced apart to provide ink feed channels to the resistor and are arranged to impart angular momentum to the ink relative to the resistor during refill on bubble collapse.

摘要翻译： 提供了具有新的和改进的屏障设计的热喷墨打印头。 为每个电阻器提供两个屏障，阻挡层部分围绕电阻器。 阻挡层间隔开以向电阻器提供油墨供给通道，并且布置成在气泡塌陷时重新填充期间相对于电阻器赋予油墨角动量。

公开(公告)号：US06487232B1

公开(公告)日：2002-11-26

申请号：US09199987

申请日：1998-11-24

申请人： Glenn H. Rankin

发明人： Glenn H. Rankin

IPC分类号： H01S308

CPC分类号： H01S3/08022 ,  H01S3/0635 ,  H01S3/08004

摘要： The present invention reduces multimoding of light generated by lasers. An asymmetric dispersion enhancer is included in a laser cavity to increase the asymmetric dispersion of the light amplified in the cavity. As a result, the side modes of the light passing through the cavity are asymmetrically disposed about the fundamental mode and, therefore, are amplified less in the cavity. Consequently, multimoding of the light is better suppressed.

摘要翻译： 本发明减少了由激光器产生的光的多重编码。 不对称色散增强器包括在激光腔中以增加在腔中放大的光的不对称色散。 结果，通过空腔的光的侧面模式围绕基本模式不对称地设置，因此在空腔中被放大得更少。 因此，更好地抑制光的多重编码。

公开(公告)号：US07247885B2

公开(公告)日：2007-07-24

申请号：US11137939

申请日：2005-05-26

申请人： Glenn H. Rankin ,  Sandeep R. Bahl

发明人： Glenn H. Rankin ,  Sandeep R. Bahl

IPC分类号： H01L27/15

CPC分类号： H01L33/025 ,  H01L33/0008 ,  H01L33/0054 ,  H01L33/34

摘要： In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is created. The pattern controls formation of local crystal modifications in the first Group IV semiconductor in an array. An array of local crystal modifications is formed in the first Group IV semiconductor in accordance with the pattern. The local crystal modifications induce overlapping strain fields that increase the bandgap of the first Group IV semiconductor, create an energy band barrier against transport of minority carriers across the first region. A second region that includes a second Group IV semiconductor that has a bandgap and is doped with a second dopant of a second electrical conductivity type opposite the first conductivity type is formed. Semiconductor devices formed in accordance with this method also are described.

摘要翻译： 一方面，形成包括具有带隙并掺杂有第一导电类型的第一掺杂物的第一IV族半导体的第一区域。 创建模式。 该图案控制阵列中第一组IV半导体中局部晶体修饰的形成。 根据图案，在第一组IV半导体中形成局部晶体修改阵列。 局部晶体修饰引起叠加的应变场，其增加第一组IV半导体的带隙，从而产生抵抗少数载流子跨越第一区域传输的能带屏障。 形成第二区域，其包括具有带隙并掺杂有与第一导电类型相反的第二导电类型的第二掺杂剂的第二IV族半导体。 还描述了根据该方法形成的半导体器件。

公开(公告)号：US07294848B2

公开(公告)日：2007-11-13

申请号：US11138925

申请日：2005-05-26

申请人： Sandeep R. Bahl ,  Glenn H. Rankin

发明人： Sandeep R. Bahl ,  Glenn H. Rankin

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L33/00 ,  H01L31/12

CPC分类号： H01L33/34 ,  H01L33/0054

摘要： In one aspect, a semiconductor device includes a p-region and an n-region. The p-region includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first region of local crystal modifications inducing localized strain that increases the bandgap of the first Group IV semiconductor and creates a conduction band energy barrier against transport of electrons across the p-region. The n-region includes a second Group IV semiconductor that has a bandgap and is doped with an n-type dopant, and a second region of local crystal modifications inducing localized strain that increases the bandgap of the second Group IV semiconductor and creates a valence band energy barrier against transport of holes across the n-region.

摘要翻译： 一方面，半导体器件包括p区和n区。 p区包括具有带隙并掺杂有p型掺杂剂的第一IV族半导体，以及引起局部应变的局部晶体修饰的第一区域，其增加第一IV族半导体的带隙并产生导带 能量阻挡电子穿过p区域。 n区包括具有带隙并掺杂有n型掺杂剂的第二IV族半导体，以及引起局部应变的局部晶体变形的第二区域，其增加第二族IV半导体的带隙并产生价带 穿过n区域的空穴传输的能量屏障。

公开(公告)号：US06833958B2

公开(公告)日：2004-12-21

申请号：US09778661

申请日：2001-02-06

申请人： Glenn H. Rankin ,  Jeffrey N. Miller

发明人： Glenn H. Rankin ,  Jeffrey N. Miller

IPC分类号： G02B110

CPC分类号： H01S5/18366 ,  H01S5/0614 ,  H01S5/18369 ,  H01S5/18388

摘要： The present disclosure relates to an optical cavity, comprising a first non-concave reflector positioned at a first end of the optical cavity and a second non-concave reflector positioned at a second end of the optical cavity that receives and reflects light reflected from the first non-concave reflector. The first non-concave reflector is configured to focus light that reflects off of the reflector back upon itself to avoid diffraction losses from the optical cavity. In one embodiment of the invention, the first non-concave reflector includes a layer of material that has a thickness that vanes as a function of radial distance out from an axial center of the layer. In another embodiment of the invention, the first non-concave reflector includes a layer of material that has an index of refraction that varies as a function of radial distance out from an axial center of the layer.

摘要翻译： 本发明涉及一种光学腔，其包括位于光腔的第一端的第一非凹面反射器和位于光腔的第二端处的第二非凹面反射器，其接收和反射从第一 非凹面反射器。 第一非凹面反射器被配置为将反射回反射器的光聚焦在其自身上，以避免衍生自光腔的损耗。 在本发明的一个实施例中，第一非凹面反射器包括一层材料，该层具有从该层的轴向中心离开的径向距离的叶片的厚度。 在本发明的另一个实施例中，第一非凹面反射器包括一层材料，其具有根据从该层的轴向中心的径向距离而变化的折射率。