公开(公告)号：US12040594B2

公开(公告)日：2024-07-16

申请号：US18085005

申请日：2022-12-20

Applicant: Excelitas Technologies Corp.

Inventor： Bartley C. Johnson ,  Mark E. Kuznetsov ,  Peter S. Whitney

IPC: H01S5/183 ,  H01S5/04 ,  H01S5/343

CPC classification number: H01S5/18366 ,  H01S5/041 ,  H01S5/18369 ,  H01S5/34306

Abstract: A vertical cavity surface emitting laser (VCSEL) has a shortened overall laser cavity by combining the gain section with a distributed Bragg reflector (DBR). The overall cavity length can be contracted by placing gain structures inside the DBR. This generally applies to a number of semiconductor material systems and wavelength bands, but this scheme is very well suited to the AlGaAs/GaAs material system with strained InGaAs quantum wells as a gain medium, for example.

公开(公告)号：US11973315B2

公开(公告)日：2024-04-30

申请号：US17706651

申请日：2022-03-29

Applicant: APPLE INC.

Inventor： Jae Y. Park ,  Arnaud Laflaquière ,  Christophe Vérove ,  Fei Tan

IPC: H01S5/183 ,  H01S5/30 ,  H01S5/343 ,  H01S5/42

CPC classification number: H01S5/18308 ,  H01S5/18358 ,  H01S5/18366 ,  H01S5/18369 ,  H01S5/3095 ,  H01S5/34313 ,  H01S5/426

Abstract: An optoelectronic device includes a carrier substrate and a lower distributed Bragg-reflector (DBR) stack disposed on an area of the substrate and including alternating first layers. A set of epitaxial layers disposed over the lower DBR includes a quantum well structure. An upper DBR stack disposed over the set of epitaxial layers includes alternating second layers. Electrodes apply an excitation current to the quantum well structure. At least one of the electrodes includes a metal ring disposed at an inner side of at least one of the DBR stacks in proximity to the quantum well structure. One or more metal vias pass through the at least one of the DBR stacks so as to connect the metal ring at the inner side of the at least one of the DBR stacks to an electrical contact on an outer side of the at least one of the DBR stacks.

公开(公告)号：US20240006852A1

公开(公告)日：2024-01-04

申请号：US18466863

申请日：2023-09-14

Applicant: HESAI TECHNOLOGY CO., LTD.

Inventor： Jiarui FEI ,  Chenren YU ,  Jianfeng LIU ,  Shaoqing XIANG

IPC: H01S5/183 ,  H01S3/08 ,  H01S5/42 ,  H01S5/026 ,  G01S17/88

CPC classification number: H01S5/18366 ,  H01S3/08059 ,  H01S5/423 ,  H01S5/026 ,  G01S17/88

Abstract: A laser device, a light source module and a laser radar. The laser device comprises: a light-emitting lamination, comprising a first reflector (105), an active region (104) and a second reflector (102), which are sequentially arranged in a light emergence direction, wherein the light-emitting lamination comprises one or more light-emitting units (200), and each of the light-emitting units (200) comprises a plurality of regularly arranged light-emitting points (203); and electrode units (107) located on the side of the first reflector (105) that is away from the active region (104), wherein each of the electrode units (107) corresponds to one light-emitting unit (200) and is used for loading a driving signal to the light-emitting unit (200). The laser device can improve the uniformity of luminous intensity.

公开(公告)号：US20180335575A1

公开(公告)日：2018-11-22

申请号：US15974516

申请日：2018-05-08

Applicant: Innovative Micro Technology

Inventor： Christopher S. GUDEMAN

IPC: G02B6/36 ,  G02B6/44 ,  G02B6/35 ,  H01S5/00 ,  H01S5/183

CPC classification number: G02B6/3652 ,  G02B6/3596 ,  G02B6/3608 ,  G02B6/4471 ,  H01S5/0064 ,  H01S5/18366

Abstract: Described here is a platform for supporting a fiber optic cable. The platform may be made on a silicon wafer using silicon lithographic processing techniques. The platform may include a substrate having a top planar surface; a trench formed in the substrate in the top planar surface and dimensioned to accept a fiber optic cable carrying radiation; and a reflecting surface formed in the top planar surface, wherein this reflecting surface is configured to reflect the radiation by total internal reflection, wherein the reflecting surface is configured to direct radiation travelling in a first direction into a second direction, substantially orthogonal to the first direction.

公开(公告)号：US09972971B2

公开(公告)日：2018-05-15

申请号：US15208385

申请日：2016-07-12

Applicant: CANON KABUSHIKI KAISHA

Inventor： Koichiro Nakanishi

IPC: H01S5/18 ,  H01S5/183 ,  G01B9/02 ,  H01S5/10

CPC classification number: H01S5/18361 ,  G01B9/02004 ,  G01B9/02091 ,  H01S5/105 ,  H01S5/18311 ,  H01S5/18366

Abstract: A surface emission laser includes a first beam, a second reflector disposed in an opening portion formed in the first beam, and a second beam disposed in the opening portion, and extending in a widthwise direction of the first beam to connect the second reflector and the first beam, wherein a length, in a longitudinal direction of the first beam, of the second beam is smaller than a length, in the longitudinal direction of the first beam, of the second reflector.

公开(公告)号：US09638913B2

公开(公告)日：2017-05-02

申请号：US14553807

申请日：2014-11-25

Applicant: Inphenix, Inc.

Inventor： Mohammad Kamal ,  Tongning Li ,  David Eu ,  Qinian Qi

IPC: H01S5/00 ,  H01S3/08 ,  G02B26/00 ,  H01S5/14 ,  H01S3/083 ,  H01S3/105

CPC classification number: G02B26/001 ,  B81C1/00317 ,  B81C2201/013 ,  G02B1/11 ,  G02B1/12 ,  H01L33/46 ,  H01L39/2467 ,  H01L2924/1461 ,  H01S3/08027 ,  H01S3/083 ,  H01S3/105 ,  H01S3/1062 ,  H01S5/141 ,  H01S5/18366

Abstract: A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.

公开(公告)号：US09397468B2

公开(公告)日：2016-07-19

申请号：US14878678

申请日：2015-10-08

Applicant: Thorlabs, Inc. ,  Praevium Research, Inc.

Inventor： Alex Ezra Cable ,  Vijaysekhar Jayaraman ,  Benjamin Michael Potsaid

IPC: H01S3/105 ,  H01S3/10 ,  H01S5/10 ,  H01S5/34 ,  G01N21/25 ,  G01N21/27 ,  H01S5/00 ,  H01S5/0687 ,  H01S5/183

CPC classification number: H01S5/0683 ,  G01B9/02004 ,  G01B9/02091 ,  G01N21/255 ,  G01N21/272 ,  G01N21/4795 ,  G01N2021/399 ,  G01N2201/0612 ,  H01S3/10015 ,  H01S3/10061 ,  H01S3/105 ,  H01S3/1396 ,  H01S5/0071 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/041 ,  H01S5/042 ,  H01S5/0607 ,  H01S5/0687 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18311 ,  H01S5/18355 ,  H01S5/18361 ,  H01S5/18366 ,  H01S5/18372 ,  H01S5/34 ,  H01S5/34306 ,  H01S5/34313 ,  H01S2301/02

Abstract: Optical systems employ a tunable source which includes a short cavity laser with a large free spectral range cavity, fast tuning response, and single transverse and longitudinal mode operation. Systems for optical spectroscopy with optimized scanning, a system for optical beam steering and a system for a tunable local oscillator are disclosed.

Abstract translation: 光学系统采用可调谐源，其包括具有大自由光谱范围腔的短腔激光器，快速调谐响应以及单个横向和纵向模式操作。 公开了具有优化扫描的光学光谱系统，用于光束转向的系统和用于可调谐本地振荡器的系统。

公开(公告)号：US09379520B2

公开(公告)日：2016-06-28

申请号：US14790118

申请日：2015-07-02

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yasuhiro Nagatomo

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/187 ,  H01S5/10 ,  G01B9/02 ,  H01S5/12 ,  H01S5/125 ,  A61B5/00

CPC classification number: H01S5/18366 ,  A61B5/0066 ,  G01B9/02001 ,  G01B9/02091 ,  H01S5/10 ,  H01S5/1039 ,  H01S5/12 ,  H01S5/125 ,  H01S5/183 ,  H01S5/1833 ,  H01S5/18333 ,  H01S5/18361 ,  H01S5/18363 ,  H01S5/187

Abstract: In order to provide a wavelength tunable surface emitting laser capable of improving a wavelength tuning efficiency, provided is a surface emitting laser, including: a first reflector; a semiconductor cavity including an active layer; and a second reflector, the first reflector, the semiconductor cavity, and the second reflector being formed in the stated order, a gap portion being formed between the first reflector and a semiconductor layer, a cavity length being tunable, in which the surface emitting laser has a high reflectivity structure formed between the gap portion and the semiconductor cavity, and an expression of “(λ/2)×m+λ/8

Abstract translation: 为了提供能够提高波长调谐效率的波长可调谐表面发射激光器，提供了一种表面发射激光器，包括：第一反射器; 包括有源层的半导体腔; 以及第二反射器，所述第一反射器，所述半导体腔和所述第二反射器按照所述顺序形成，在所述第一反射器和半导体层之间形成间隙部分，所述空腔长度是可调谐的，其中所述表面发射激光器 在间隙部分和半导体腔之间形成高反射率结构，并且满足“（λ/ 2）×m +λ/ 8

公开(公告)号：US09377399B2

公开(公告)日：2016-06-28

申请号：US13674839

申请日：2012-11-12

Applicant: Lawrence Livermore National Security, LLC

Inventor： Tiziana C Bond ,  Garrett Cole ,  Lynford Goddard

IPC: G01N21/39 ,  H01S5/10 ,  H01S3/08 ,  H01S3/105 ,  H01S3/1055 ,  G01N21/77 ,  H01S5/183 ,  H01S5/00

CPC classification number: G01N21/39 ,  G01N21/774 ,  G01N2021/396 ,  G01N2021/399 ,  G01N2201/06113 ,  G01N2201/068 ,  H01S3/08059 ,  H01S3/1053 ,  H01S3/1055 ,  H01S5/0028 ,  H01S5/10 ,  H01S5/18366 ,  H01S5/18369 ,  H01S2302/00

Abstract: Configurations for in-situ gas detection are provided, and include miniaturized photonic devices, low-optical-loss, guided-wave structures and state-selective adsorption coatings. High quality factor semiconductor resonators have been demonstrated in different configurations, such as micro-disks, micro-rings, micro-toroids, and photonic crystals with the properties of very narrow NIR transmission bands and sensitivity up to 10−9 (change in complex refractive index). The devices are therefore highly sensitive to changes in optical properties to the device parameters and can be tunable to the absorption of the chemical species of interest. Appropriate coatings applied to the device enhance state-specific molecular detection.

Abstract translation: 提供原位气体检测的结构，包括小型光子器件，低光损耗，导波结构和状态选择性吸附涂层。 已经在不同的配置中证明了高品质因子半导体谐振器，例如微盘，微环，微环形圈和具有非常窄的NIR透射带的性质的光子晶体和高达10-9的灵敏度（复折射率的变化 指数）。 因此，器件对于器件参数的光学性质的变化非常敏感，并且可以调节为感兴趣的化学物质的吸收。 施加到装置上的合适的涂层增强状态特异性分子检测。

公开(公告)号：US09360298B2

公开(公告)日：2016-06-07

申请号：US14313567

申请日：2014-06-24

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yasuhiro Nagatomo

IPC: H01S3/08 ,  G01B9/02 ,  H01S5/14 ,  H01S5/183 ,  H01S5/022

CPC classification number: G01B9/02091 ,  H01S5/0222 ,  H01S5/141 ,  H01S5/18366

Abstract: A surface emitting laser operable to change a wavelength of emitted light includes a first reflecting mirror, a second reflecting mirror, wherein a cavity is formed between the first reflecting mirror and the second reflecting mirror along the optical axis of the surface emitting laser, an active layer formed within the cavity, a region formed within the cavity, and a movable part situated within the region, the movable part having a refractive index different from a refractive index of the region. The wavelength of emitted light is changeable by changing the position of the movable part along the direction of the optical axis in the region.

Abstract translation: 可操作以改变发射光的波长的表面发射激光器包括第一反射镜，第二反射镜，其中沿着表面发射激光器的光轴在第一反射镜和第二反射镜之间形成腔， 在空腔内形成的层，形成在腔内的区域和位于该区域内的可移动部分，可移动部分具有与该区域的折射率不同的折射率。 发射光的波长可以通过沿着该区域中的光轴的方向改变可移动部分的位置来改变。