公开(公告)号：US20230343778A1

公开(公告)日：2023-10-26

申请号：US17724548

申请日：2022-04-20

Applicant: GlobalFoundries U.S. Inc.

Inventor： Prantik Mahajan ,  Ajay ,  Vishal Ganesan ,  Ruchil Jain ,  Souvick Mitra

IPC: H01L27/02

CPC classification number: H01L27/0262

Abstract: Structures for an electrostatic discharge device including a silicon-controlled rectifier and methods of forming a structure for an electrostatic discharge device that includes a silicon-controlled rectifier. The structure includes a first well in a semiconductor substrate, a second well and a third well in the first well, and a fourth well in the first well. The first well has a first conductivity type, and the second well and the third well have the first conductivity type. The fourth well positioned in a lateral direction between the second well and the third well, and the fourth well has a second conductivity type opposite to the first conductivity type. The second well, the third well, and the fourth well are positioned in a vertical direction between the first well and a top surface of the semiconductor substrate.

公开(公告)号：US20240096868A1

公开(公告)日：2024-03-21

申请号：US17946089

申请日：2022-09-16

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ajay ,  Ruchil Kumar Jain ,  Prantik Mahajan ,  Alban Zaka

IPC: H01L27/02 ,  H01L29/74

CPC classification number: H01L27/0248 ,  H01L29/7436

Abstract: Structures for a silicon-controlled rectifier and methods of forming same. The structure comprises a first well, a second well, and a third well in a semiconductor substrate. The third well is positioned between the first well and the second well. A first terminal includes a first doped region in the first well, and a second terminal includes a second doped region in the second well. The first well, the second well, and the second doped region have a first conductivity type, and the third well and the first doped region have a second conductivity type opposite to the first conductivity type. The structure further comprises a third doped region in the third well. The third doped region includes a first segment and a second segment, and the first segment is separated from the second segment by a portion of the first well and a portion of the third well.