公开(公告)号：US20250098190A1

公开(公告)日：2025-03-20

申请号：US18368412

申请日：2023-09-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： Alexander M. DERRICKSON ,  Kaustubh SHANBHAG ,  Vibhor JAIN ,  Judson R. HOLT

IPC: H01L29/737 ,  H01L29/201 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: a collector; a base region above the collector; an emitter laterally connecting to the base region; and an extrinsic base connecting to the base region.

公开(公告)号：US20240234425A1

公开(公告)日：2024-07-11

申请号：US18095746

申请日：2023-01-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Tamilmani ETHIRAJAN ,  Kaustubh SHANBHAG ,  George R. MULFINGER ,  Anton V. TOKRANOV ,  Eric S. KOZARSKY ,  Hui ZHAN

IPC: H01L27/12 ,  H01L21/84 ,  H01L23/535 ,  H01L29/78

CPC classification number: H01L27/1203 ,  H01L21/84 ,  H01L23/535 ,  H01L29/7838

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with isolation structures in active regions and methods of manufacture. The structure includes: an active region; a plurality of isolation structures within the active region; a plurality of gate structures overlapping the plurality of isolation structures within the active region; and diffusion regions on sides of the plurality of gate structures and the plurality of isolation structures.