公开(公告)号：US20240014204A1

公开(公告)日：2024-01-11

申请号：US17857439

申请日：2022-07-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Vishal Ganesan ,  Prantik Mahajan ,  Nandha Kumar Subramani ,  Souvick Mitra

IPC: H01L27/02

CPC classification number: H01L27/0262

Abstract: Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure comprises a first well and a second well in a semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well, the second well and the first doped region have a first conductivity type, and the second doped region has a second conductivity type opposite to the first conductivity type. The structure further comprises a deep well in the semiconductor substrate. The deep well has the second conductivity type, the first well is positioned in a vertical direction between the deep well and the top surface of the semiconductor substrate, and the second well is positioned in the vertical direction between the deep well and the top surface of the semiconductor substrate.