Patent search ap:("GlobalFoundries U.S. Inc.") AND inv:"Pushparaj Pathak" Page 1

1.

发明申请
INTEGRATED CIRCUIT STRUCTURE WITH DIFFUSION BREAK IN P-TYPE FIELD EFFECT TRANSISTOR REGION AND METHOD 有权

公开(公告)号：US20250126888A1

公开(公告)日：2025-04-17

申请号：US18453507

申请日：2023-08-22

Applicant: GlobalFoundries U.S. Inc.

Inventor： George Robert Mulfinger , Pushparaj Pathak , Selina A. Mala

IPC: H01L27/12 , H01L21/84 , H01L29/78

Abstract: A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating layer and an opening over the first insulating pattern, and a conductive gate material over the opening.

Patent Agency Ranking