公开(公告)号：US20240088242A1

公开(公告)日：2024-03-14

申请号：US17943925

申请日：2022-09-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Johnatan A. KANTAROVSKY ,  Rebouh BENELBAR ,  Ajay RAMAN ,  Michel J. ABOU-KHALIL ,  Rajendran KRISHNASAMY ,  Randy L. WOLF

IPC: H01L29/417 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/41775 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/401 ,  H01L29/66462 ,  H01L29/7786

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to high-electron-mobility transistors and methods of manufacture. A structure includes: a semiconductor layer on a semiconductor material; a gate structure on the semiconductor layer; a drain region comprising the semiconductor layer and which is adjacent to the gate structure; an ohmic contact which includes at least one terminal connection connecting to the semiconductor material, the ohmic contact being adjacent to the drain region and spaced away from the gate structure; and a capacitance reducing structure adjacent to the drain region.