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公开(公告)号：US11837547B2
公开(公告)日：2023-12-05
申请号：US17450324
申请日：2021-10-08
IPC分类号： H01L23/532 , H01L23/552 , H01L23/522
CPC分类号： H01L23/53295 , H01L23/5226 , H01L23/552
摘要： A photonic integrated circuit (PIC) die includes a silicon nitride optical component over an active region. Multiple interconnect layers are over the silicon nitride optical component, each of the multiple interconnect layers including a metal interconnect therein. At least one optical deflector is over the multiple interconnect layers and over the silicon nitride optical component. The optical deflector(s) may also include a contact passing therethrough to the interconnect layers, but do not include any other electrical interconnects. Each optical deflector may deflect light within an ambient light range of less than 570 nanometers (nm) to protect the silicon nitride optical component from light-induced degradation.
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公开(公告)号：US20230113261A1
公开(公告)日：2023-04-13
申请号：US17450324
申请日：2021-10-08
IPC分类号： H01L23/532 , H01L23/522 , H01L23/552
摘要： A photonic integrated circuit (PIC) die includes a silicon nitride optical component over an active region. Multiple interconnect layers are over the silicon nitride optical component, each of the multiple interconnect layers including a metal interconnect therein. At least one optical deflector is over the multiple interconnect layers and over the silicon nitride optical component. The optical deflector(s) may also include a contact passing therethrough to the interconnect layers, but do not include any other electrical interconnects. Each optical deflector may deflect light within an ambient light range of less than 570 nanometers (nm) to protect the silicon nitride optical component from light-induced degradation.
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