公开(公告)号：US20240284680A1

公开(公告)日：2024-08-22

申请号：US18172027

申请日：2023-02-21

申请人： GlobalFoundries U.S. Inc.

发明人： Zhixing Zhao ,  Dominik M. Kleimaier ,  Stefan Duenkel

IPC分类号： H10B51/30 ,  G11C11/22 ,  H01L29/78

CPC分类号： H10B51/30 ,  G11C11/2275 ,  H01L29/78391

摘要： A ferroelectric memory device includes a substrate including a source region and a drain region, and a gate structure disposed over the substrate. The gate structure includes a gate electrode including a plurality of electrode portions arranged in a first direction parallel to a top surface of the substrate, an oxide layer including a plurality of oxide portions corresponding respectively to the plurality of electrode portions, and a ferroelectric layer disposed between the gate electrode and the oxide layer along a second direction perpendicular to the first direction and including a plurality of ferroelectric portions corresponding respectively to the plurality of oxide portions. A least one of the plurality of oxide portions and at least one of the plurality of ferroelectric portions have different thicknesses along the second direction.