公开(公告)号：US20240313113A1

公开(公告)日：2024-09-19

申请号：US18182926

申请日：2023-03-13

申请人： GlobalFoundries U.S. Inc.

发明人： Anton V. Tokranov ,  James P. Mazza ,  Eric Scott Kozarsky ,  Elizabeth A. Strehlow ,  Vitor A. Vulcano Rossi ,  Hong Yu

IPC分类号： H01L29/78 ,  H01L21/762 ,  H01L29/66

CPC分类号： H01L29/7846 ,  H01L21/76229 ,  H01L29/66795 ,  H01L29/7851

摘要： Disclosed is a semiconductor structure and method of forming the semiconductor structure. Specifically, the semiconductor structure can include a first semiconductor fin extending from a semiconductor substrate. The semiconductor structure can further include an isolation region on the semiconductor substrate adjacent to a lower portion of the first semiconductor fin. The first semiconductor fin can, for example, be incorporated into a single-fin fin-type semiconductor device, such as a single-fin fin-type field effect transistor (FINFET). The isolation region can include at least one shallow trench isolation (STI) structure positioned laterally between and immediately adjacent to sections of a deep trench isolation (DTI) structure. With this alternating DTI-STI-DTI configuration, overall shrinkage of isolation material of the isolation region during anneals is reduced and, thus, so are stress-induced crystalline defects in the first semiconductor fin. Also disclosed are methods for forming such a semiconductor structure.