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公开(公告)号：US20240308107A1
公开(公告)日：2024-09-19
申请号：US18041967
申请日：2021-08-16
申请人： VISWESH SRINIVASAN
发明人： VISWESH SRINIVASAN
CPC分类号： B28D5/045 , B28D5/0064
摘要： In CNC wire cutting process, the deflection of the wire due to cutting force is proportional to square of the wire length. Hence it is beneficial to adjust wire length as per job size and keep it minimal. But existing wire cutting machines, wire length adjustment is not feasible. Hence there is a need to develop a simple user-friendly method of wire length adjustment. This invention proposes a simple user-friendly method of wire length adjustment in abrasive wire (100A) and hot wire cutting (100B) machines. This invention also proposes an intelligent faster cutting method without affecting wire life or pulley life. This invention also proposes an intelligent method of start point selection in CNC wire cutting machines, to avoid part defects.
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2.发明公开公开(公告)号：US20240246260A1
公开(公告)日：2024-07-25
申请号：US18627996
申请日：2024-04-05
申请人： SILTRONIC AG
发明人： Axel BEYER , Stefan WELSCH
CPC分类号： B28D5/0064 , B28D5/0082 , B28D5/045 , B28D5/007
摘要： Semiconductor wafers having a subsurface-referenced nanotopography of the upper side surface of less than 6 nm, expressed as a maximum peak-to-valley distance on a subsurface and referenced to subsurfaces with an area content of 25 mm×25 mm, are produced from a workpiece by feeding the workpiece through a wire web tensioned between wire guide rollers and divided into wire groups, the wires producing kerfs as the wires engage the workpiece. For each of the wire groups, a placement error of the kerfs of the wire groups is used to compensate movements of the wires of the wire group as a function of the placement error, in a direction perpendicular to the running direction of the wires during feeding of the workpiece through the arrangement of wires, by activating at least one drive element.
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公开(公告)号：US12030216B2
公开(公告)日：2024-07-09
申请号：US18454474
申请日：2023-08-23
申请人： Siltectra GmbH
IPC分类号： B28D5/00 , B23K26/00 , B23K26/53 , B23K103/00
CPC分类号： B28D5/0011 , B23K26/0006 , B23K26/53 , B28D5/0064 , B23K2103/56
摘要： A method for separating wafers from donor substrates incudes: determining at least one individual property of a respective donor substrate, the at least one individual property including doping and/or crystal lattice dislocations of the respective donor substrate; generating donor substrate process data for the respective donor substrate, the donor substrate process data including analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate; generating, via a laser device, modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and generating mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.
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公开(公告)号：US20240189940A1
公开(公告)日：2024-06-13
申请号：US18411914
申请日：2024-01-12
申请人： Wolfspeed, Inc.
发明人： Matthew Donofrio , John Edmond , Harshad Golakia , Eric Mayer
CPC分类号： B23K26/032 , B23K26/40 , B23K26/53 , B28D5/0064 , H01L21/02686
摘要： A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.
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公开(公告)号：US11969917B2
公开(公告)日：2024-04-30
申请号：US17575999
申请日：2022-01-14
申请人： SENIC Inc.
发明人： Jung-Gyu Kim , Kap-Ryeol Ku , Jung Doo Seo , Jung Woo Choi , Jong Hwi Park
CPC分类号： B28D5/045 , B28D5/0064 , B28D5/0082
摘要： A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.
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公开(公告)号：US20230373129A1
公开(公告)日：2023-11-23
申请号：US18319607
申请日：2023-05-18
申请人： DISCO CORPORATION
发明人： Koyo HONOKI , Koji ITABASHI , Ryohei YAMAMOTO , Haruki MATSUO
CPC分类号： B28D5/047 , B28D5/0094 , B28D5/0064 , B28D5/0011 , B28D5/0052 , B23K26/0093 , B23K26/0853 , B23K26/40 , B23K2101/40
摘要： A peeling apparatus includes a holding table that holds an ingot, a water supply unit that forms a layer of water on an upper surface of the ingot, an ultrasonic unit that applies an ultrasonic wave to the upper surface of the ingot through the layer of water, a peeling confirmation unit that confirms peeling-off of a wafer to be manufactured, a wafer delivery unit that lowers a suction pad having a suction surface facing the upper surface of the ingot, to hold the wafer to be manufactured on the suction surface under suction, and delivers the wafer from the ingot, and a controller. After the peeling-off of the wafer is confirmed by the peeling confirmation unit, the controller positions the water supply unit, the ultrasonic unit, and the peeling confirmation unit at retracted positions and operates the wafer delivery unit to deliver the wafer from the ingot.
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公开(公告)号：US11787083B2
公开(公告)日：2023-10-17
申请号：US16637877
申请日：2018-08-07
申请人： Siltectra GmbH
发明人： Marko Swoboda , Christian Beyer , Ralf Rieske , Albrecht Ullrich , Jan Richter
IPC分类号： B28D5/00 , B23K26/53 , B23K26/00 , B23K103/00
CPC分类号： B28D5/0011 , B23K26/0006 , B23K26/53 , B28D5/0064 , B23K2103/56
摘要： The invention relates to a production facility (40) for detaching wafers (2) from donor substrates (4). According to the invention, the production facility comprises at least one analysis device (6) for determining at least one individual property, particularly the doping, of the respective donor substrate (4), a data device (10) for producing donor substrate process data for individual donor substrates (4), wherein the donor substrate process data comprise analysis data of the analysis device (6), and the analysis data describe at least the individual property of the donor substrate (4), a laser device (12) for producing modifications (14) inside the donor substrate (4) in order to form a region of detachment (16) inside the respective donor substrate (4), wherein the laser device (12) can be operated according to the donor substrate process data of a concrete donor substrate (4) for the machining of the concrete donor substrate (4), and a detachment device (18) for producing mechanical voltages inside the respective donor substrate (4) for triggering and/or guiding a crack for separating respectively at least one wafer (2) from a donor substrate (4).
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8.发明公开公开(公告)号：US20230278118A1
公开(公告)日：2023-09-07
申请号：US18008986
申请日：2021-05-27
申请人： Siltronic AG
发明人： Axel Beyer , Patrick Berger , Wolfgang Dietz , Carl Frintert , Matthias Guenther
CPC分类号： B23D57/0023 , B23D59/04 , B23D59/002 , B28D5/0064
摘要： Slices are cut from workpieces during a sequence of cut-off operations by a wire saw, having a wire array. The wire array is tensioned in a plane between two wire guide rollers supported between fixed and floating bearings. During each cut-off operation, a workpiece is fed through the wire array perpendicular to a workpiece axis and the wire array plane. The workpiece is fed with simultaneous axial movement of the floating bearings by adjusting a temperature of the fixed bearings in correlation with a first correction profile, which specifies a travel of the floating bearings in dependence on the depth of cut. In dependence on the depth of cut, operating parameters are set, such as the feed rate, an amount of working fluid fed to the wire array per unit time, a temperature of the working fluid, a wire speed, a wire consumption per cut-off operation, or a wire tension.
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公开(公告)号：US20180085969A1
公开(公告)日：2018-03-29
申请号：US15716048
申请日：2017-09-26
IPC分类号： B28D5/04
CPC分类号： B28D5/045 , B23D59/001 , B26D1/553 , B26D11/00 , B26D2001/008 , B26D2210/00 , B28D5/0064
摘要： In an ingot cutting apparatus that cuts an ingot using a plurality of stretched wires, load sensors are provided on the new wire side and the old wire side of the ingot, and loads applied to the new wire side and the old wire side of the ingot are measured using the load sensors on the new wire side and the old wire side. When measuring the loads, for example, the center of moment about the X-axis that is the running direction of the wire is calculated. When the deviation from the center of gravity of the ingot is greater than or equal to a reference value, notification for replacement of the wire, control of the conveying speed of the wire, control of the pressing speed of the ingot, and so forth are performed through a control unit.
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公开(公告)号：US08723288B2
公开(公告)日：2014-05-13
申请号：US13226519
申请日：2011-09-07
申请人： Ralf Hammer , Manfred Jurisch
发明人： Ralf Hammer , Manfred Jurisch
IPC分类号： B28D5/00
CPC分类号： H01L21/78 , B28D5/00 , B28D5/0064 , Y10S117/915 , Y10T225/12 , Y10T428/24802 , Y10T428/31678
摘要： A single crystal having a technologically generated cleavage surface that extends along a natural crystallographic cleavage plane with an accuracy of less than |0.001°| when measured over a length relevant for the technology of the single crystal or over each of a plurality of surface areas extending in the direction of separation and having a length ≧2 mm within the technologically relevant surface area.
摘要翻译： 具有技术上生成的解理面的单晶，其沿着天然晶体解理面延伸，精度小于| 0.001°| 当在与单晶技术相关的长度上测量时，或在分离方向上延伸的多个表面区域中的每一个上测量，并且在技术上相关的表面积内具有≥2mm的长度。
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