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公开(公告)号:US20190221648A1
公开(公告)日:2019-07-18
申请号:US16226265
申请日:2018-12-19
发明人: Jia-Zhe Liu , Yen Lun Huang , Chih-Yuan Chuang , Che Ming Liu , Wen-Ching Hsu , Manhsuan Lin
IPC分类号: H01L29/205 , H01L29/20 , H01L21/02
CPC分类号: H01L29/205 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0251 , H01L29/2003
摘要: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x≤1 and y≥0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.