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公开(公告)号：US11942360B2
公开(公告)日：2024-03-26
申请号：US18182823
申请日：2023-03-13
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , C30B15/20 , C30B29/06 , H01L21/322 , H01L23/66 , H01L27/12 , H01L29/06
CPC分类号： H01L21/76243 , C30B15/206 , C30B29/06 , H01L21/3226 , H01L21/76251 , H01L23/66 , H01L27/1203 , H01L29/0649 , H01L2223/6661
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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公开(公告)号：US11626318B2
公开(公告)日：2023-04-11
申请号：US17234023
申请日：2021-04-19
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , C30B29/06 , H01L21/322 , H01L23/66 , H01L27/12 , H01L29/06
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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3.发明申请公开(公告)号：US20200020571A1
公开(公告)日：2020-01-16
申请号：US16508606
申请日：2019-07-11
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , H01L21/322 , C30B29/06
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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4.发明公开公开(公告)号：US20230215759A1
公开(公告)日：2023-07-06
申请号：US18182823
申请日：2023-03-13
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , H01L27/12 , C30B29/06 , C30B15/20 , H01L23/66
CPC分类号： H01L21/76251 , H01L27/1203 , C30B29/06 , H01L21/76243 , C30B15/206 , H01L23/66 , H01L2223/6661
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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公开(公告)号：US10943813B2
公开(公告)日：2021-03-09
申请号：US16452762
申请日：2019-06-26
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , C30B29/06 , H01L21/322 , H01L23/66 , H01L27/12 , H01L29/06
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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公开(公告)号：US11887885B2
公开(公告)日：2024-01-30
申请号：US18047844
申请日：2022-10-19
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , C30B29/06 , H01L21/322 , H01L23/66 , H01L27/12 , H01L29/06 , C30B15/20
CPC分类号： H01L21/76243 , C30B15/206 , C30B29/06 , H01L21/3226 , H01L21/76251 , H01L23/66 , H01L27/1203 , H01L29/0649 , H01L2223/6661
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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公开(公告)号：US11532501B2
公开(公告)日：2022-12-20
申请号：US17166039
申请日：2021-02-03
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , C30B29/06 , H01L21/322 , H01L23/66 , H01L27/12 , H01L29/06
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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公开(公告)号：US20210159114A1
公开(公告)日：2021-05-27
申请号：US17166039
申请日：2021-02-03
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , C30B29/06 , H01L21/322 , H01L23/66 , H01L27/12 , H01L29/06
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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9.发明申请公开(公告)号：US20200020766A1
公开(公告)日：2020-01-16
申请号：US16452762
申请日：2019-06-26
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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公开(公告)号：US20230062816A1
公开(公告)日：2023-03-02
申请号：US18047844
申请日：2022-10-19
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , C30B29/06 , H01L21/322 , H01L23/66 , H01L27/12 , H01L29/06
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
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