-
公开(公告)号：US11942360B2
公开(公告)日：2024-03-26
申请号：US18182823
申请日：2023-03-13
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , C30B15/20 , C30B29/06 , H01L21/322 , H01L23/66 , H01L27/12 , H01L29/06
CPC分类号： H01L21/76243 , C30B15/206 , C30B29/06 , H01L21/3226 , H01L21/76251 , H01L23/66 , H01L27/1203 , H01L29/0649 , H01L2223/6661
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
-
公开(公告)号：US10658472B2
公开(公告)日：2020-05-19
申请号：US16094141
申请日：2017-04-28
发明人： Vikas Berry , Sanjay Behura , Phong Nguyen , Michael R. Seacrist
IPC分类号： H01L21/02 , H01L29/786 , H01L29/267 , H01L21/283 , H01L29/45 , H01L29/66
摘要： A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein. The process includes (BN)XHy-radical interfacing with active sites on silicon nitride coated silicon (Si3N4/Si) surfaces for nucleation and growth of large-area, uniform and ultrathin h-BN directly on Si3N4/Si substrates (B/N atomic ratio=1:1.11±0.09). Further, monolayer graphene van der Waals bonded with the produced h-BN surface benefits from h-BN's reduced roughness (3.4 times) in comparison to Si3N4/Si. Because the reduced surface roughness leads to reduction in surface roughness scattering and charge impurity scattering, therefore an enhanced intrinsic charge carrier mobility (3 folds) for graphene on h-BN/Si3N4/Si is found.
-
3.发明公开公开(公告)号：US20230215759A1
公开(公告)日：2023-07-06
申请号：US18182823
申请日：2023-03-13
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , H01L27/12 , C30B29/06 , C30B15/20 , H01L23/66
CPC分类号： H01L21/76251 , H01L27/1203 , C30B29/06 , H01L21/76243 , C30B15/206 , H01L23/66 , H01L2223/6661
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
-
公开(公告)号：US11276759B2
公开(公告)日：2022-03-15
申请号：US16726395
申请日：2019-12-24
发明人： Vikas Berry , Sanjay Behura , Phong Nguyen , Michael R. Seacrist
IPC分类号： H01L29/267 , H01L21/02 , H01L21/283 , H01L29/45 , H01L29/66 , H01L29/786 , H01L21/285
摘要： A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein. The process includes (BN)XHy-radical interfacing with active sites on silicon nitride coated silicon (Si3N4/Si) surfaces for nucleation and growth of large-area, uniform and ultrathin h-BN directly on Si3N4/Si substrates (B/N atomic ratio=1:1.11±0.09). Further, monolayer graphene van der Waals bonded with the produced h-BN surface benefits from h-BN's reduced roughness (3.4 times) in comparison to Si3N4/Si. Because the reduced surface roughness leads to reduction in surface roughness scattering and charge impurity scattering, therefore an enhanced intrinsic charge carrier mobility (3 folds) for graphene on h-BN/Si3N4/Si is found.
-
公开(公告)号：US10943813B2
公开(公告)日：2021-03-09
申请号：US16452762
申请日：2019-06-26
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , C30B29/06 , H01L21/322 , H01L23/66 , H01L27/12 , H01L29/06
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
-
公开(公告)号：US11626318B2
公开(公告)日：2023-04-11
申请号：US17234023
申请日：2021-04-19
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , C30B29/06 , H01L21/322 , H01L23/66 , H01L27/12 , H01L29/06
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
-
公开(公告)号：US20200152744A1
公开(公告)日：2020-05-14
申请号：US16726395
申请日：2019-12-24
发明人： Vikas Berry , Sanjay Behura , Phong Nguyen , Michael R. Seacrist
IPC分类号： H01L29/267 , H01L21/02 , H01L21/283 , H01L29/45 , H01L29/66 , H01L29/786
摘要： A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein. The process includes (BN)xHy-radical interfacing with active sites on silicon nitride coated silicon (Si3N4/Si) surfaces for nucleation and growth of large-area, uniform and ultrathin h-BN directly on Si3N4/Si substrates (B/N atomic ratio=1:1.11±0.09). Further, monolayer graphene van der Waals bonded with the produced h-BN surface benefits from h-BN's reduced roughness (3.4 times) in comparison to Si3N4/Si. Because the reduced surface roughness leads to reduction in surface roughness scattering and charge impurity scattering, therefore an enhanced intrinsic charge carrier mobility (3 folds) for graphene on h-BN/Si3N4/Si is found.
-
8.发明申请公开(公告)号：US20200020571A1
公开(公告)日：2020-01-16
申请号：US16508606
申请日：2019-07-11
发明人： Michael R. Seacrist , Robert W. Standley , Jeffrey L. Libbert , Hariprasad Sreedharamurthy , Leif Jensen
IPC分类号： H01L21/762 , H01L21/322 , C30B29/06
摘要： A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.
-
公开(公告)号：US20190206675A1
公开(公告)日：2019-07-04
申请号：US16292441
申请日：2019-03-05
发明人： Gang Wang , Michael R. Seacrist
IPC分类号： H01L21/02 , H01L29/20 , H01L21/762 , H01L33/00
摘要： A method is provided for forming Group IIIA-nitride layers, such as GaN, on substrates. The Group IIIA-nitride layers may be deposited on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates. The Group IIIA-nitride layers may be deposited by heteroepitaxial deposition on mesa-patterned semiconductor-on-insulator (SOI, e.g., silicon-on-insulator) substrates.
-
公开(公告)号：US20190097000A1
公开(公告)日：2019-03-28
申请号：US16094141
申请日：2017-04-28
发明人： Vikas Berry , Sanjay Behura , Phong Nguyen , Michael R. Seacrist
IPC分类号： H01L29/267 , H01L21/02 , H01L21/283 , H01L29/45 , H01L29/786 , H01L29/66
摘要： A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein. The process includes (BN)XHy-radical interfacing with active sites on silicon nitride coated silicon (Si3N4/Si) surfaces for nucleation and growth of large-area, uniform and ultrathin h-BN directly on Si3N4/Si substrates (B/N atomic ratio=1:1.11±0.09). Further, monolayer graphene van der Waals bonded with the produced h-BN surface benefits from h-BN's reduced roughness (3.4 times) in comparison to Si3N4/Si. Because the reduced surface roughness leads to reduction in surface roughness scattering and charge impurity scattering, therefore an enhanced intrinsic charge carrier mobility (3 folds) for graphene on h-BN/Si3N4/Si is found.
-
-
-
-
-
-
-
-
-
搜索结果
21 条记录 (耗时 0.015 秒)
