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公开(公告)号：US12037697B2
公开(公告)日：2024-07-16
申请号：US18325142
申请日：2023-05-30
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
CPC分类号： C30B15/002 , C30B15/10 , C30B15/36 , C30B29/06 , C30B35/002 , C30B35/007 , Y10T117/1008
摘要： A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
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2.发明授权公开(公告)号：US11845030B2
公开(公告)日：2023-12-19
申请号：US16907313
申请日：2020-06-22
发明人： Masami Nakanishi , Yu-Sheng Su , I-Ching Li
CPC分类号： B01D45/16 , B01D53/145 , B01D53/46 , B01D53/76 , B04C5/185 , B04C9/00 , C30B35/00 , B01D2252/103 , B04C2009/005
摘要： A dust collecting system for single crystal growth system includes an air compressor, a dust collecting device, a first inert gas source, a rotary pump and a scrubber. The air compressor is fluidly connected to an exit pipe of the single crystal growth system. The exit pipe is used to exhaust unstable dust from the single crystal growth system. The dust collecting device is fluidly connecting to the exit pipe to collect the dust oxide. The first inert gas source is fluidly connected to the exit pipe to blow a first inert gas into the exit pipe to compel the dust oxide toward the dust collecting device. The rotary pump is fluidly connected to the dust collecting device. The scrubber is fluidly connected to the rotary pump. The rotary pump transports the residual dust oxide toward the scrubber. The present disclosure further provides a method for collecting dust.
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3.发明申请公开(公告)号：US20210363656A1
公开(公告)日：2021-11-25
申请号：US17324108
申请日：2021-05-19
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
摘要： A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
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4.发明授权公开(公告)号：US12037696B2
公开(公告)日：2024-07-16
申请号：US17324108
申请日：2021-05-19
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
CPC分类号： C30B15/002 , C30B15/10 , C30B15/36 , C30B29/06 , C30B35/002 , C30B35/007 , Y10T117/1008
摘要： A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
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公开(公告)号：US12006589B2
公开(公告)日：2024-06-11
申请号：US17679576
申请日：2022-02-24
发明人： Chung-Sheng Chang , Masami Nakanishi , Yu-Sheng Su , Yen-Hsun Chu , Yung-Chi Wu , Yi-Hua Fan
摘要： A purification apparatus and a method of purifying hot zone parts are provided. The purification apparatus is configured to remove impurities attached on at least one hot zone part. The purification apparatus includes a crystal high temperature furnace, an enclosed box disposed in the crystal high temperature furnace, an outer tube connected to the crystal high temperature furnace and the enclosed box, an inner tube disposed in the outer tube, and a gas inlet cover connected to the outer tube. The crystal high temperature furnace includes a furnace body, a furnace cover, and a thermal field module disposed in the furnace body. The gas inlet cover is configured to input a noble gas into the enclosed box through the inner tube, and the thermal field module is configured to heat the noble gas so that the impurities are heated and vaporized through the noble gas.
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公开(公告)号：US20230347271A1
公开(公告)日：2023-11-02
申请号：US18217687
申请日：2023-07-03
发明人： Masami Nakanishi , YU-SHENG SU , I-CHING LI
CPC分类号： B01D45/16 , C30B35/00 , B01D53/145 , B01D53/76 , B04C5/185 , B04C9/00 , B01D53/46 , B04C2009/005 , B01D2252/103
摘要： A method for collecting dust from a single crystal growth system includes providing dry air and oxygen into an exit pipe connecting to the single crystal growth system, blowing a first inert gas into the exit pipe to compel the dust oxide toward a dust collecting device, collecting the dust oxide by the dust collecting device; and providing a rotary pump to transport residues of the dust oxide backward. The oxygen reacts with the unstable dust for forming dust oxide. The exit pipe is used to exhaust unstable dust from the single crystal growth system.
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公开(公告)号：US20230304185A1
公开(公告)日：2023-09-28
申请号：US18325138
申请日：2023-05-30
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
CPC分类号： C30B15/002 , C30B29/06 , C30B35/002 , C30B15/36 , C30B35/007 , C30B15/10
摘要： A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
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公开(公告)号：US20230295833A1
公开(公告)日：2023-09-21
申请号：US18325142
申请日：2023-05-30
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
CPC分类号： C30B15/002 , C30B29/06 , C30B35/002 , C30B15/36 , C30B35/007 , C30B15/10
摘要： A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
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公开(公告)号：US20220267923A1
公开(公告)日：2022-08-25
申请号：US17679576
申请日：2022-02-24
发明人： Chung-Sheng Chang , Masami Nakanishi , YU-SHENG SU , YEN-HSUN CHU , YUNG-CHI WU , Yi-Hua Fan
摘要： A purification apparatus and a method of purifying hot zone parts are provided. The purification apparatus is configured to remove impurities attached on at least one hot zone part. The purification apparatus includes a crystal high temperature furnace, an enclosed box disposed in the crystal high temperature furnace, an outer tube connected to the crystal high temperature furnace and the enclosed box, an inner tube disposed in the outer tube, and a gas inlet cover connected to the outer tube. The crystal high temperature furnace includes a furnace body, a furnace cover, and a thermal field module disposed in the furnace body. The gas inlet cover is configured to input a noble gas into the enclosed box through the inner tube, and the thermal field module is configured to heat the noble gas so that the impurities are heated and vaporized through the noble gas.
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公开(公告)号：US12076677B2
公开(公告)日：2024-09-03
申请号：US18217687
申请日：2023-07-03
发明人： Masami Nakanishi , Yu-Sheng Su , I-Ching Li
CPC分类号： B01D45/16 , B01D53/145 , B01D53/46 , B01D53/76 , B04C5/185 , B04C9/00 , C30B35/00 , B01D2252/103 , B04C2009/005
摘要： A method for collecting dust from a single crystal growth system includes providing dry air and oxygen into an exit pipe connecting to the single crystal growth system, blowing a first inert gas into the exit pipe to compel the dust oxide toward a dust collecting device, collecting the dust oxide by the dust collecting device; and providing a rotary pump to transport residues of the dust oxide backward. The oxygen reacts with the unstable dust for forming dust oxide. The exit pipe is used to exhaust unstable dust from the single crystal growth system.
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