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1.发明授权公开(公告)号：US12037696B2
公开(公告)日：2024-07-16
申请号：US17324108
申请日：2021-05-19
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
CPC分类号： C30B15/002 , C30B15/10 , C30B15/36 , C30B29/06 , C30B35/002 , C30B35/007 , Y10T117/1008
摘要： A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
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公开(公告)号：US12037697B2
公开(公告)日：2024-07-16
申请号：US18325142
申请日：2023-05-30
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
CPC分类号： C30B15/002 , C30B15/10 , C30B15/36 , C30B29/06 , C30B35/002 , C30B35/007 , Y10T117/1008
摘要： A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
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3.发明申请公开(公告)号：US20210363656A1
公开(公告)日：2021-11-25
申请号：US17324108
申请日：2021-05-19
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
摘要： A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
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公开(公告)号：US20230304185A1
公开(公告)日：2023-09-28
申请号：US18325138
申请日：2023-05-30
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
CPC分类号： C30B15/002 , C30B29/06 , C30B35/002 , C30B15/36 , C30B35/007 , C30B15/10
摘要： A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
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公开(公告)号：US20230295833A1
公开(公告)日：2023-09-21
申请号：US18325142
申请日：2023-05-30
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
CPC分类号： C30B15/002 , C30B29/06 , C30B35/002 , C30B15/36 , C30B35/007 , C30B15/10
摘要： A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.
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公开(公告)号：US20230160095A1
公开(公告)日：2023-05-25
申请号：US17964039
申请日：2022-10-12
发明人： Kazuo Nakajima , Masami Nakanishi , Yu Sheng Su , Wen-Ching Hsu
CPC分类号： C30B15/14 , C30B15/10 , C30B15/20 , C30B29/06 , C30B35/002
摘要： A method for producing Si ingot single crystal including a Si ingot single crystal growing step, a temperature gradient controlling step and a continuous growing step is provided. In the growing step, the Si ingot single crystal is grown in silicon melt in crucible, and the growing step includes providing a low-temperature region in the Si melt and providing a silicon seed to contact the melt surface of the silicon melt to start crystal growth, and silicon single crystal grows along the melt surface of the silicon melt and toward the inside of the silicon melt. In the temperature gradient controlling step, the under-surface temperature gradient of the silicon single crystal is G1, the above-surface temperature gradient of the silicon single crystal is G2, G1 and G2 satisfy: G2/G1
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