High permittivity ceramic compositions
    1.
    发明授权
    High permittivity ceramic compositions 失效
    高介电常数陶瓷组合物

    公开(公告)号:US4477581A

    公开(公告)日:1984-10-16

    申请号:US519908

    申请日:1983-08-03

    摘要: A high permittivity ceramic composition consisting essentially of a main component expressed by the general formula:(Ba.sub.1-x Me.sub.x) (Ti.sub.1-y Me'.sub.y)O.sub.3whereinMe is Ca and/or Sr, Me' is Zr and/or Sn, x and y are respective mole fractions of Me and Me', 0.06.ltoreq.x .ltoreq.0.14, and 0.06.ltoreq.y .ltoreq.0.14; anda secondary component consisting essentially of 65 to 90 mol % of PbTiO.sub.3, 1 to 10 mol % of Pb.sub.5 Ge.sub.3 O.sub.11 and 1 to 30 mol % of Bi.sub.2 Ti.sub.2 O.sub.7, the content of the secondary component being 5 to 15 weight percent of the amount of the main component.

    摘要翻译: 主要由以下通式表示的主成分组成的高介电常数陶瓷组合物(Ba1-xMex)(Ti1-yMe'y)O3,其中Me是Ca和/或Sr,Me'是Zr和/或Sn,x和 y是Me和Me'的相应摩尔分数,0.06≤x≤0.14,0.06≤y≤0.4; 以及基本上由PbTiO 3的65〜90摩尔%,Pb5Ge3O11为1〜10摩尔%,Bi2Ti2O7为1〜30摩尔%的二次成分构成的二次成分,主成分的量为5〜15重量% 。

    Ceramic dielectric composition
    2.
    发明授权
    Ceramic dielectric composition 失效
    陶瓷电介质组成

    公开(公告)号:US4339544A

    公开(公告)日:1982-07-13

    申请号:US284216

    申请日:1981-07-17

    CPC分类号: C04B35/499 H01G4/1254

    摘要: A ceramic dielectric composition of a ternary system Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 -Pb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 -PbTiO.sub.3, comprising 69.05-69.60% by weight of Pb.sub.3 O.sub.4, 2.41-4.00% by weight of MgO, 0.08-3.15% by weight of ZnO, 24.01-26.66% by weight of Nb.sub.2 O.sub.5 and 0.13-2.59% by weight of TiO.sub.2. The composition can be sintered at a low firing temperature less than 1,150.degree. C., and has a high dielectric constant above 10,000.

    摘要翻译: 三元体系Pb(Mg1 / 3Nb2 / 3)O3-Pb(Zn1 / 3Nb2 / 3)O3-PbTiO3的陶瓷电介质组合物,其包含69.05-69.60重量%的Pb 3 O 4,2.41-4.00重量%的MgO,0.08 -3.15重量%的ZnO,24.01-26.66重量%的Nb 2 O 5和0.13-2.59重量%的TiO 2。 该组合物可以在低于1150℃的低烧成温度下烧结,并且具有高于10,000的高介电常数。

    Head-mounted device
    3.
    发明授权
    Head-mounted device 有权
    头戴式装置

    公开(公告)号:US08928557B2

    公开(公告)日:2015-01-06

    申请号:US13554464

    申请日:2012-07-20

    IPC分类号: G02B27/01 G02B7/00

    CPC分类号: G02B27/0176 G02B7/002

    摘要: A head-mounted device for mounting on the head of a user includes a first pressing member for pressing a first portion of the head from a first direction; a second pressing member for pressing a second portion of the head from a second direction that is different from the first direction; a string member that concatenates the first pressing member and the second pressing member; a structure that guides the string member so that the first and the second pressing members move in the first and the second directions, respectively, according to changes in the length of the string member; and an adjusting unit that adjusts the length of the string member.

    摘要翻译: 用于安装在用户头部上的头戴式装置包括:用于从第一方向按压头部的第一部分的第一按压构件; 第二按压部件,用于从与第一方向不同的第二方向按压头部的第二部分; 串联构件,其将第一按压构件和第二按压构件连接起来; 引导弦构件使得第一和第二按压构件分别沿着弦构件的长度的变化沿第一和第二方向移动的结构; 以及调节单元,其调节所述弦构件的长度。

    Opening/closing device
    4.
    发明授权
    Opening/closing device 有权
    开/关装置

    公开(公告)号:US08590560B2

    公开(公告)日:2013-11-26

    申请号:US13147345

    申请日:2010-02-02

    IPC分类号: F16K31/18 E02B7/36

    摘要: An opening/closing device includes a gate that receives a flow of a sewage, and can fall toward a downstream side of the flow, a fall prevention unit that prevents the gate from falling by supporting the gate, a support release unit that releases the support for the gate by the fall prevention unit, a first float that is arranged on the upstream side of the gate, and is smaller in specific gravity than the sewage, a surfacing prevention unit that prevents the first float from surfacing, a second float that is arranged on the upstream side of the gate, above the first float, and is smaller in specific gravity than the fluid, and a surfacing-prevention release unit that releases, resulting from surfacing of the second float, the prevention of the surfacing of the first float by the surfacing prevention unit. Further, the support release unit is activated resulting from surfacing of the first float.

    摘要翻译: 一种打开/关闭装置,包括:接收污水流并能够朝向流动的下游侧流入的门;防止门通过支撑门而防止门落下的防坠落单元, 用于由防坠落单元设置的闸门,布置在闸门上游侧并且比污水小的比重的第一浮子,防止第一浮标浮起的表面防止单元,第二浮子, 布置在闸门的上游侧,在第一浮子上方,并且比流体的比重小;以及由第二浮子的表面剥离而导致的防止放置单元,防止第一浮子的表面化 由防水单元浮起。 此外,支撑释放单元由于第一浮子的浮雕而被激活。

    Droplet discharging head and method of manufacturing the same, and droplet discharging device and method of manufacturing the same
    5.
    发明授权
    Droplet discharging head and method of manufacturing the same, and droplet discharging device and method of manufacturing the same 有权
    喷液头及其制造方法,液滴喷出装置及其制造方法

    公开(公告)号:US08011762B2

    公开(公告)日:2011-09-06

    申请号:US11865599

    申请日:2007-10-01

    IPC分类号: B41J2/045 B41J2/14 H01L21/00

    摘要: A droplet discharging head comprises: a cavity substrate including a discharge chamber having a bottom wall serving as a vibration plate; and an electrode substrate including an individual electrode that faces the vibration plate with a gap and drives the vibration plate, and a driver integrated circuit (IC) that couples with the individual electrode and applies a voltage to the individual electrode. The cavity substrate includes a first opening that penetrates the cavity substrate and serves to house the driver IC, and an insulation film formed on a wall face of the first opening.

    摘要翻译: 液滴喷射头包括:空腔基板​​,包括具有用作振动板的底壁的排出室; 以及包括单个电极的电极基板,其具有间隙的振动板并驱动振动板;驱动器集成电路(IC),其与各个电极耦合并向各个电极施加电压。 空腔基板包括穿过空腔基板并用于容纳驱动器IC的第一开口和形成在第一开口的壁面上的绝缘膜。

    Liquid crystal display
    6.
    发明授权
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号:US07369203B2

    公开(公告)日:2008-05-06

    申请号:US11302390

    申请日:2005-12-14

    申请人: Hiroshi Komatsu

    发明人: Hiroshi Komatsu

    IPC分类号: G02F1/1343

    CPC分类号: G02F1/134363

    摘要: A liquid crystal display including: a first transparent substrate coated with a first alignment layer, a second transparent substrate coated with a second alignment layer, the second substrate facing the first transparent substrate, a liquid crystal layer between the substrates, a polarizer attached on the outer surfaces of the substrates, a pair of electrodes formed on the first substrates, and a driving circuit applying signal voltage to the electrodes. The liquid crystal molecules adjacent to the first substrate is rotated by applying the voltage, but, the liquid crystal molecule adjacent to the second substrate is fixed regardless of the applied voltage. The electrode pair, substantially straight data and common electrodes, are inclined at an angle with respect to a gate line.

    摘要翻译: 一种液晶显示器,包括:涂覆有第一取向层的第一透明基板,涂覆有第二取向层的第二透明基板,与第一透明基板相对的第二基板,基板之间的液晶层, 基板的外表面,形成在第一基板上的一对电极以及向电极施加信号电压的驱动电路。 与第一基板相邻的液晶分子通过施加电压而旋转,但与第二基板相邻的液晶分子是固定的,而与施加的电压无关。 电极对,基本上直的数据和公共电极相对于栅极线倾斜一定角度。

    Liquid crystal display
    7.
    发明申请
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号:US20070013851A1

    公开(公告)日:2007-01-18

    申请号:US11302390

    申请日:2005-12-14

    申请人: Hiroshi Komatsu

    发明人: Hiroshi Komatsu

    IPC分类号: G02F1/1343

    CPC分类号: G02F1/134363

    摘要: A liquid crystal display including: a first transparent substrate coated with a first alignment layer, a second transparent substrate coated with a second alignment layer, the second substrate facing the first transparent substrate, a liquid crystal layer between the substrates, a polarizer attached on the outer surfaces of the substrates, a pair of electrodes formed on the first substrates, and a driving circuit applying signal voltage to the electrodes. The liquid crystal molecules adjacent to the first substrate is rotated by applying the voltage, but, the liquid crystal molecule adjacent to the second substrate is fixed regardless of the applied voltage. The electrode pair, substantially straight data and common electrodes, are inclined at an angle with respect to a gate line.

    摘要翻译: 一种液晶显示器,包括:涂覆有第一取向层的第一透明基板,涂覆有第二取向层的第二透明基板,与第一透明基板相对的第二基板,基板之间的液晶层, 基板的外表面,形成在第一基板上的一对电极以及向电极施加信号电压的驱动电路。 与第一基板相邻的液晶分子通过施加电压而旋转,但与第二基板相邻的液晶分子是固定的,而与施加的电压无关。 电极对,基本上直的数据和公共电极相对于栅极线倾斜一定角度。

    Coating device
    8.
    发明授权
    Coating device 失效
    涂装装置

    公开(公告)号:US07063744B2

    公开(公告)日:2006-06-20

    申请号:US11206343

    申请日:2005-08-18

    IPC分类号: B05C1/14 B32B37/12

    CPC分类号: B05C1/14 B05C1/022 Y10S118/03

    摘要: There is provided a coating device which can quickly cope with a change in size of a container. A pair of coating belts (annular belts) (11, 15) are arranged on two sides of a conveyor (10). The coating belt (15) is rotated at a high speed while the coating belt (11) is rotated at a low speed. A container (bottle) (1) on the conveyor (10) is coated while being rotated. When the size of the container (1) is to be changed, a pressing roller (57) is moved by an adjusting mechanism (50) in accordance with the size of the container (1).

    摘要翻译: 提供了能够快速应对容器尺寸变化的涂布装置。 一对涂布带(环形带)(11,15)布置在输送机(10)的两侧。 当涂布带(11)以低速旋转时,涂布带(15)以高速旋转。 输送机(10)上的容器(瓶)(1)被旋转涂覆。 当要改变容器(1)的尺寸时,根据容器(1)的尺寸,通过调节机构(50)使加压辊(57)移动。

    Method of producing a semiconductor device having improved gate structure
    9.
    发明授权
    Method of producing a semiconductor device having improved gate structure 失效
    制造具有改善的栅极结构的半导体器件的方法

    公开(公告)号:US06773970B2

    公开(公告)日:2004-08-10

    申请号:US10368994

    申请日:2003-02-19

    申请人: Hiroshi Komatsu

    发明人: Hiroshi Komatsu

    IPC分类号: H01L2100

    摘要: A method of producing a semiconductor device able to prevent outward diffusion of an impurity from a gate electrode and improve the device quality, the method comprising the steps of forming a gate electrode made of a semiconductor layer on a substrate (preferably SOI substrate) via a gate insulating film, forming a first insulating film coating the gate electrode by ALD, forming a second insulating film on a first insulating film, introducing an impurity to a substrate (preferably silicon active layer of the SOI wafer) to form a source/drain region by self-alignment with respect to the gate electrode, and forming an interlayer insulating film on the second insulating film.

    摘要翻译: 一种制造能够防止杂质从栅电极向外扩散并提高器件质量的半导体器件的方法,该方法包括以下步骤:在衬底(优选SOI衬底)上形成由半导体层制成的栅电极 形成通过ALD涂覆栅电极的第一绝缘膜,在第一绝缘膜上形成第二绝缘膜,将杂质引入衬底(优选SOI晶片的硅有源层)以形成源极/漏极区域 通过对栅电极进行自对准,并在第二绝缘膜上形成层间绝缘膜。