摘要:
A high permittivity ceramic composition consisting essentially of a main component expressed by the general formula:(Ba.sub.1-x Me.sub.x) (Ti.sub.1-y Me'.sub.y)O.sub.3whereinMe is Ca and/or Sr, Me' is Zr and/or Sn, x and y are respective mole fractions of Me and Me', 0.06.ltoreq.x .ltoreq.0.14, and 0.06.ltoreq.y .ltoreq.0.14; anda secondary component consisting essentially of 65 to 90 mol % of PbTiO.sub.3, 1 to 10 mol % of Pb.sub.5 Ge.sub.3 O.sub.11 and 1 to 30 mol % of Bi.sub.2 Ti.sub.2 O.sub.7, the content of the secondary component being 5 to 15 weight percent of the amount of the main component.
摘要:
A ceramic dielectric composition of a ternary system Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 -Pb(Zn.sub.1/3 Nb.sub.2/3)O.sub.3 -PbTiO.sub.3, comprising 69.05-69.60% by weight of Pb.sub.3 O.sub.4, 2.41-4.00% by weight of MgO, 0.08-3.15% by weight of ZnO, 24.01-26.66% by weight of Nb.sub.2 O.sub.5 and 0.13-2.59% by weight of TiO.sub.2. The composition can be sintered at a low firing temperature less than 1,150.degree. C., and has a high dielectric constant above 10,000.
摘要翻译:三元体系Pb(Mg1 / 3Nb2 / 3)O3-Pb(Zn1 / 3Nb2 / 3)O3-PbTiO3的陶瓷电介质组合物,其包含69.05-69.60重量%的Pb 3 O 4,2.41-4.00重量%的MgO,0.08 -3.15重量%的ZnO,24.01-26.66重量%的Nb 2 O 5和0.13-2.59重量%的TiO 2。 该组合物可以在低于1150℃的低烧成温度下烧结,并且具有高于10,000的高介电常数。
摘要:
A head-mounted device for mounting on the head of a user includes a first pressing member for pressing a first portion of the head from a first direction; a second pressing member for pressing a second portion of the head from a second direction that is different from the first direction; a string member that concatenates the first pressing member and the second pressing member; a structure that guides the string member so that the first and the second pressing members move in the first and the second directions, respectively, according to changes in the length of the string member; and an adjusting unit that adjusts the length of the string member.
摘要:
An opening/closing device includes a gate that receives a flow of a sewage, and can fall toward a downstream side of the flow, a fall prevention unit that prevents the gate from falling by supporting the gate, a support release unit that releases the support for the gate by the fall prevention unit, a first float that is arranged on the upstream side of the gate, and is smaller in specific gravity than the sewage, a surfacing prevention unit that prevents the first float from surfacing, a second float that is arranged on the upstream side of the gate, above the first float, and is smaller in specific gravity than the fluid, and a surfacing-prevention release unit that releases, resulting from surfacing of the second float, the prevention of the surfacing of the first float by the surfacing prevention unit. Further, the support release unit is activated resulting from surfacing of the first float.
摘要:
A droplet discharging head comprises: a cavity substrate including a discharge chamber having a bottom wall serving as a vibration plate; and an electrode substrate including an individual electrode that faces the vibration plate with a gap and drives the vibration plate, and a driver integrated circuit (IC) that couples with the individual electrode and applies a voltage to the individual electrode. The cavity substrate includes a first opening that penetrates the cavity substrate and serves to house the driver IC, and an insulation film formed on a wall face of the first opening.
摘要:
A liquid crystal display including: a first transparent substrate coated with a first alignment layer, a second transparent substrate coated with a second alignment layer, the second substrate facing the first transparent substrate, a liquid crystal layer between the substrates, a polarizer attached on the outer surfaces of the substrates, a pair of electrodes formed on the first substrates, and a driving circuit applying signal voltage to the electrodes. The liquid crystal molecules adjacent to the first substrate is rotated by applying the voltage, but, the liquid crystal molecule adjacent to the second substrate is fixed regardless of the applied voltage. The electrode pair, substantially straight data and common electrodes, are inclined at an angle with respect to a gate line.
摘要:
A liquid crystal display including: a first transparent substrate coated with a first alignment layer, a second transparent substrate coated with a second alignment layer, the second substrate facing the first transparent substrate, a liquid crystal layer between the substrates, a polarizer attached on the outer surfaces of the substrates, a pair of electrodes formed on the first substrates, and a driving circuit applying signal voltage to the electrodes. The liquid crystal molecules adjacent to the first substrate is rotated by applying the voltage, but, the liquid crystal molecule adjacent to the second substrate is fixed regardless of the applied voltage. The electrode pair, substantially straight data and common electrodes, are inclined at an angle with respect to a gate line.
摘要:
There is provided a coating device which can quickly cope with a change in size of a container. A pair of coating belts (annular belts) (11, 15) are arranged on two sides of a conveyor (10). The coating belt (15) is rotated at a high speed while the coating belt (11) is rotated at a low speed. A container (bottle) (1) on the conveyor (10) is coated while being rotated. When the size of the container (1) is to be changed, a pressing roller (57) is moved by an adjusting mechanism (50) in accordance with the size of the container (1).
摘要:
A method of producing a semiconductor device able to prevent outward diffusion of an impurity from a gate electrode and improve the device quality, the method comprising the steps of forming a gate electrode made of a semiconductor layer on a substrate (preferably SOI substrate) via a gate insulating film, forming a first insulating film coating the gate electrode by ALD, forming a second insulating film on a first insulating film, introducing an impurity to a substrate (preferably silicon active layer of the SOI wafer) to form a source/drain region by self-alignment with respect to the gate electrode, and forming an interlayer insulating film on the second insulating film.