Laser Facet Passivation
    1.
    发明申请
    Laser Facet Passivation 失效
    激光面钝化

    公开(公告)号:US20060216842A1

    公开(公告)日:2006-09-28

    申请号:US11277602

    申请日:2006-03-27

    IPC分类号: H01L21/00

    摘要: Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.

    摘要翻译: 制备二极管激光器的前面和后面的方法包括控制第一室内的气氛,使得氧含量和水蒸气含量被控制在预定水平内,并将二极管激光器从受控气氛中的晶片 第一室以形成在二极管激光器的正面和背面上憎恨预定厚度的自然氧化物层。 在切割之后,二极管激光器在受控气氛中从第一室输送到第二室,部分去除二极管激光器的前面和后面上的自然氧化物层,在正面和背面形成无定形表面层 二极管激光器的小面以及二极管激光器的前面和后面被钝化。