公开(公告)号：US4418400A

公开(公告)日：1983-11-29

申请号：US218993

申请日：1980-12-22

Applicant: Gregory J. Cosimini ,  David S. Lo ,  Maynard C. Paul

Inventor： Gregory J. Cosimini ,  David S. Lo ,  Maynard C. Paul

IPC: G11C19/08

CPC classification number: G11C19/0841

Abstract: An improved magnetic memory system in which binary data are stored as cross-tie, Bloch-line pairs, which are serially propagated downstream along a cross-tie wall in a magnetizable layer by appropriate drive fields. The magnetizable layer is configured into a data track whose two opposing edges are formed into patterns of asymmetrically shaped edges which form successive narrow portions with wide portions therebetween, and which are formed about the geometric centerline of the data track. The improvement comprises forming a plurality of energy wells along the geometric centerline of the data track and, transverse to the geometric centerline of the data track in the areas of the narrow portions where the cross-ties are stored but not in the areas of the geometric centerline.

Abstract translation: 一种改进的磁存储系统，其中二进制数据被存储为交叉连接布洛赫线对，其通过适当的驱动场沿着可磁化层中的交叉连接壁在下游串行地传播。 可磁化层被配置成数据轨道，其两个相对边缘形成为不对称形状的边缘的图案，其形成连续的窄部分，其间具有宽的部分，并且围绕数据轨道的几何中心线形成。 改进包括沿着数据轨道的几何中心线形成多个能量阱，并且横向于数据轨道的几何中心线，在狭窄部分的交叉点被存储的区域中，但不在几何区域 中心线。

公开(公告)号：US4250565A

公开(公告)日：1981-02-10

申请号：US20762

申请日：1979-02-23

Applicant: Gregory J. Cosimini ,  Leslie H. Johnson ,  David S. Lo ,  George F. Nelson ,  Maynard C. Paul

Inventor： Gregory J. Cosimini ,  Leslie H. Johnson ,  David S. Lo ,  George F. Nelson ,  Maynard C. Paul

IPC: G11C19/08 ,  G11C11/00

CPC classification number: G11C19/0866 ,  G11C19/0858

Abstract: Disclosed is a cross-tie wall memory system for the generating, propagating and detecting of binary data represented by the presence or absence of cross-tie, Bloch-line pairs along a cross-tie wall in a thin magnetic layer. The system includes a three-level structure comprised of the following superposed layers: a straight-edged current conductive stripline; a serrated-edged thin magnetic layer data track, and a wide-narrow-edged current conductive stripline terminated on one end by a cross-tie, Bloch-line pair generator and on the other end by a cross-tie detector.

Abstract translation: 公开了一种交叉连接壁存储系统，用于生成，传播和检测由薄磁层中的交叉连接壁的交叉连接布洛赫线对的存在或不存在的二进制数据。 该系统包括由以下重叠层组成的三电平结构：直边导电带状线; 一条锯齿状的薄磁层数据磁道，以及宽窄边电流导电带状线，其一端通过交叉连接布洛赫线对发生器端接，另一端由交叉连接检测器端接。

公开(公告)号：US4198686A

公开(公告)日：1980-04-15

申请号：US20764

申请日：1979-02-23

Applicant: George F. Nelson ,  Gregory J. Cosimini ,  Leslie H. Johnson ,  David S. Lo ,  Maynard C. Paul ,  Ernest J. Torok

Inventor： George F. Nelson ,  Gregory J. Cosimini ,  Leslie H. Johnson ,  David S. Lo ,  Maynard C. Paul ,  Ernest J. Torok

IPC: G11C19/08 ,  H03K23/76

CPC classification number: G11C19/0866 ,  G11C19/0858 ,  H03K23/766

Abstract: A method of and an apparatus for counting is disclosed. The counter includes a generator of cross-tie, Bloch-line pairs and a shift register of N stages or memory cells along which the cross-tie, Bloch-line pairs are propagated or replicated into a detector. The method includes coupling a series of bipolar push-nucleate replicate signals, each one of which produces a cross-tie, Bloch-line pair in the adjacent downstream memory cell along the shift register. When the shift register is filled, a cross-tie will appear in the detector. This provides an output signal indicating that the N memory cells have been filled by the N replicate signals.

Abstract translation: 公开了一种用于计数的方法和装置。 计数器包括交叉连接发生器，Bloch线对和N个阶段或存储器单元的移位寄存器，跨领域Bloch线对被传播或复制到检测器中。 该方法包括耦合一系列双极推进核复制信号，其中每一个在沿移位寄存器的相邻下游存储器单元中产生交叉连接布洛奇线对。 当移位寄存器被填满时，检测器中将出现交叉关系。 这提供了指示N个存储器单元已经被N个重复信号填充的输出信号。

公开(公告)号：US4587636A

公开(公告)日：1986-05-06

申请号：US699705

申请日：1985-02-08

Applicant: Gregory J. Cosimini ,  David S. Lo ,  Lawrence G. Zierhut

Inventor： Gregory J. Cosimini ,  David S. Lo ,  Lawrence G. Zierhut

IPC: G11C19/08 ,  G11C11/14

CPC classification number: G11C19/0858

Abstract: The memory system incorporates a memory element storing binary digital data in the presence, vel non, of a Y-domain cross-tie. The memory element has a planar contour that is substantially symmetrical about a longitudinal axis and that has edge portions that are nowhere perpendicular or parallel to the longitudinal axis. A stabilizing magnetic field applied perpendicular to the longitudinal axis and in the plane of the memory element forms a first Neel wall along the longitudinal axis and causes the magnetization in the memory element to be formed into first and second domains on opposite sides of the Neel wall. When a writing magnetic field oriented in the plane of the memory element and perpendicular to the longitudinal axis but opposite to the stabilizing magnetic field orientation is coupled to the memory element, there is formed in the memory element a third domain separated from the first and second domains by second and third Neel walls having a join with one end of the first Neel wall. The first, second and third Neel walls form a "Y". Because of the nature of this third domain having its magnetization oriented in a direction parallel to the readout current caused to pass through the memory element, it produces a significantly greater difference in the readout signal between the readout of a stored 1 and a stored 0 than that achieved with the prior art cross-tie wall memory element.

Abstract translation: 存储器系统包含存储二进制数字数据的存储元件，存在Y域域交叉的存在。 存储元件具有基本上围绕纵向轴线对称的平面轮廓，并且具有无法与纵向轴线垂直或平行的边缘部分。 垂直于纵向轴线并在存储元件的平面中施加的稳定磁场沿着纵向轴线形成第一Neel壁，并使存储元件中的磁化在Neel壁的相对侧上形成第一和第二区域 。 当在存储元件的平面中定向并且垂直于纵向轴线但与稳定磁场取向相反的写入磁场耦合到存储元件时，在存储元件中形成与第一和第二 具有与第一Neel壁的一端连接的第二和第三Neel壁的区域。 第一，第二和第三个Neel墙形成一个“Y”。 由于该第三域的性质在其磁化方向定向为与通过存储元件的读出电流平行的方向，因此在存储的1的读出和存储的0之间的读出信号之间产生明显更大的差异 这是利用现有技术的交叉连接壁存储元件实现的。