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公开(公告)号：US20130302978A1
公开(公告)日：2013-11-14
申请号：US13605763
申请日：2012-09-06
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。
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公开(公告)号：US20130299988A1
公开(公告)日：2013-11-14
申请号：US13468693
申请日：2012-05-10
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。
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公开(公告)号：US09472450B2
公开(公告)日：2016-10-18
申请号：US13468693
申请日：2012-05-10
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。
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公开(公告)号：US08623761B2
公开(公告)日：2014-01-07
申请号：US13605763
申请日：2012-09-06
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。
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5.发明申请ACTIVATION OF GRAPHENE BUFFER LAYERS ON SILICON CARBIDE BY ULTRA LOW TEMPERATURE OXIDATION 有权通过超低温氧化在碳化硅上活化石墨缓冲层公开(公告)号：US20110073834A1
公开(公告)日：2011-03-31
申请号：US12566870
申请日：2009-09-25
CPC分类号： H01L29/16
摘要： A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
摘要翻译： 电活化具有形成在碳化硅层上的一个或多个石墨烯层的结构的方法包括对该结构进行氧化处理，以形成设置在碳化硅层和一个或多个石墨烯的最底部之间的氧化硅层 从而电激活最底层的石墨烯层。
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6.发明授权Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation 有权通过超低温氧化在碳化硅上活化石墨烯缓冲层公开(公告)号：US08242030B2
公开(公告)日：2012-08-14
申请号：US12566870
申请日：2009-09-25
IPC分类号： H01L21/461 , H01L21/31
CPC分类号： H01L29/16
摘要： A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
摘要翻译： 电活化具有形成在碳化硅层上的一个或多个石墨烯层的结构的方法包括对该结构进行氧化处理，以形成设置在碳化硅层和一个或多个石墨烯的最底部之间的氧化硅层 从而电激活最底层的石墨烯层。
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