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1.发明授权Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidation 有权通过超低温氧化在碳化硅上活化石墨烯缓冲层公开(公告)号：US08242030B2
公开(公告)日：2012-08-14
申请号：US12566870
申请日：2009-09-25
IPC分类号： H01L21/461 , H01L21/31
CPC分类号： H01L29/16
摘要： A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
摘要翻译： 电活化具有形成在碳化硅层上的一个或多个石墨烯层的结构的方法包括对该结构进行氧化处理，以形成设置在碳化硅层和一个或多个石墨烯的最底部之间的氧化硅层 从而电激活最底层的石墨烯层。
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2.发明申请ACTIVATION OF GRAPHENE BUFFER LAYERS ON SILICON CARBIDE BY ULTRA LOW TEMPERATURE OXIDATION 有权通过超低温氧化在碳化硅上活化石墨缓冲层公开(公告)号：US20110073834A1
公开(公告)日：2011-03-31
申请号：US12566870
申请日：2009-09-25
CPC分类号： H01L29/16
摘要： A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.
摘要翻译： 电活化具有形成在碳化硅层上的一个或多个石墨烯层的结构的方法包括对该结构进行氧化处理，以形成设置在碳化硅层和一个或多个石墨烯的最底部之间的氧化硅层 从而电激活最底层的石墨烯层。
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公开(公告)号：US08623761B2
公开(公告)日：2014-01-07
申请号：US13605763
申请日：2012-09-06
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。
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公开(公告)号：US20130302978A1
公开(公告)日：2013-11-14
申请号：US13605763
申请日：2012-09-06
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。
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公开(公告)号：US20130299988A1
公开(公告)日：2013-11-14
申请号：US13468693
申请日：2012-05-10
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。
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公开(公告)号：US09472450B2
公开(公告)日：2016-10-18
申请号：US13468693
申请日：2012-05-10
申请人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
发明人： Griselda Bonilla , Christos D. Dimitrakopoulos , Alfred Grill , James B. Hannon , Qinghuang Lin , Deborah A. Neumayer , Satoshi Oida , John A. Ott , Dirk Pfeiffer
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76877 , H01L21/76835 , H01L21/76846 , H01L21/76849 , H01L21/76852 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。
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7.发明申请PHOTOSENSITIVE SELF-ASSEMBLED MONOLAYER FOR SELECTIVE PLACEMENT OF HYDROPHILIC STRUCTURES 有权用于选择性放置水文结构的感光自组装单声道公开(公告)号：US20110165428A1
公开(公告)日：2011-07-07
申请号：US13047120
申请日：2011-03-14
IPC分类号： B32B15/04
CPC分类号： C07F9/4056 , C07C271/20 , G03F7/0045 , G03F7/165 , Y10S430/106 , Y10T428/24802 , Y10T428/31678
摘要： A photosensitive monolayer is self-assembled on an oxide surface. The chemical compound of the photosensitive monolayer has three components. A first end group provides covalent bonds with the oxide surface for self assembly on the oxide surface. A photosensitive group that dissociates upon exposure to ultraviolet radiation is linked to the first end group. A second end group linked to the photosensitive group provides hydrophobicity. Upon exposure to the ultraviolet radiation, the dissociated photosensitive group is cleaved and forms a hydrophilic derivative in the exposed region, rendering the exposed region hydrophilic. Carbon nanotubes or nanocrystals applied in an aqueous dispersion are selectively attracted to the hydrophilic exposed region to from electrostatic bonding with the hydrophilic surface of the cleaved photosensitive group.
摘要翻译： 感光单层在氧化物表面上自组装。 感光单层的化合物具有三个成分。 第一端基与氧化物表面提供共价键，用于在氧化物表面上自组装。 在暴露于紫外线辐射下解离的感光基团与第一末端基团连接。 与光敏基团连接的第二端基提供疏水性。 在暴露于紫外线照射下，解离的感光基团被切割并在曝光区域中形成亲水性衍生物，使曝光区域亲水。 施加在水性分散体中的碳纳米管或纳米晶体被选择性地吸附到亲水性暴露区域以与被切割的光敏基团的亲水表面静电结合。
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公开(公告)号：US20100145034A1
公开(公告)日：2010-06-10
申请号：US12541758
申请日：2009-08-14
IPC分类号： C07C245/20 , C07F9/06 , C07F9/38 , C07C381/00 , C07C271/02 , C07C59/13 , C07C57/30 , C07C259/04
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/28 , H01B1/04 , Y10S977/742 , Y10S977/847
摘要： The present invention provides a method for selectively placing carbon nanotubes on a substrate surface by using functionalized carbon nanotubes having an organic compound that is covalently bonded to such carbon nanotubes. The organic compound comprises at least two functional groups, the first of which is capable of forming covalent bonds with carbon nanotubes, and the second of which is capable of selectively bonding metal oxides. Such functionalized carbon nanotubes are contacted with a substrate surface that has at least one portion containing a metal oxide. The second functional group of the organic compound selectively bonds to the metal oxide, so as to selectively place the functionalized carbon nanotubes on the at least one portion of the substrate surface that comprises the metal oxide.
摘要翻译： 本发明提供了一种通过使用具有共价键合到这种碳纳米管上的有机化合物的官能化碳纳米管来选择性地将碳纳米管置于基材表面上的方法。 有机化合物包括至少两个官能团，其中第一个能够与碳纳米管形成共价键，其中第二个能够选择性地键合金属氧化物。 这样的官能化碳纳米管与具有至少一部分含有金属氧化物的基材表面接触。 有机化合物的第二官能团选择性地键合到金属氧化物上，以便将官能化的碳纳米管选择性地置于包含金属氧化物的衬底表面的至少一部分上。
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9.发明授权公开(公告)号：US07727505B2
公开(公告)日：2010-06-01
申请号：US12124278
申请日：2008-05-21
IPC分类号： C01B31/02
CPC分类号： B03D3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/172 , C01B32/174 , C01B2202/28 , C01B2202/36 , C01P2004/13 , H01L51/0025 , H01L51/0049 , Y10S977/748 , Y10S977/751 , Y10S977/845 , Y10S977/847
摘要： A method for separating carbon nanotubes comprises: providing a mixture of carbon nanotubes; introducing an organic molecule having an end group capable of being chelated by a metal ion to the mixture of carbon nanotubes to covalently bond the organic molecule to at least one of the mixture of carbon nanotubes; and introducing a metal salt to the mixture of carbon nanotubes to chelate the end group of the organic molecule with the metal ion of the metal salt; and centrifuging the mixture of carbon nanotubes to cause the separation of the carbon nanotubes based on a density differential of the carbon nanotubes.
摘要翻译： 分离碳纳米管的方法包括：提供碳纳米管的混合物; 将具有能够被金属离子螯合的端基的有机分子引入到碳纳米管的混合物中，以将有机分子共价键合到至少一种碳纳米管的混合物中; 并将金属盐引入到碳纳米管的混合物中以与金属盐的金属离子螯合有机分子的端基; 并将碳纳米管的混合物离心以根据碳纳米管的密度差来分离碳纳米管。
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公开(公告)号：US20100065988A1
公开(公告)日：2010-03-18
申请号：US12212940
申请日：2008-09-18
申请人： James B. Hannon , Rudolf Tromp
发明人： James B. Hannon , Rudolf Tromp
IPC分类号： B29C59/00
CPC分类号： H01L21/02612 , H01L21/02378 , H01L21/02527 , H01L29/1608
摘要： Techniques for producing atomic step-free silicon carbide surfaces are provided. In one aspect, a method for eliminating atomic steps from a silicon carbide surface is provided. The method comprises the following step. The silicon carbide and a silicon-containing gas are contacted at a temperature, background pressure, and for a length of time sufficient to re-arrange the silicon carbide to an atomic step-free surface. The silicon carbide surface can be the top of a mesa or the bottom of a hole patterned in a silicon carbide wafer.
摘要翻译： 提供了生产无原子级的碳化硅表面的技术。 一方面，提供了从碳化硅表面消除原子台阶的方法。 该方法包括以下步骤。 碳化硅和含硅气体在背景压力的温度下接触足够长的时间以将碳化硅重新排列到无原子无梯度的表面。 碳化硅表面可以是在碳化硅晶片中图案化的台面的顶部或孔的底部。
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