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1.发明授权Predictive method to improve within wafer CMP uniformity through optimized pad conditioning 有权通过优化的衬垫调节来提高晶片CMP均匀性的预测方法公开(公告)号：US07899571B2
公开(公告)日：2011-03-01
申请号：US12265242
申请日：2008-11-05
申请人： Gul Bahar Basim , Serkan Kincal , Eugene C. Davis
发明人： Gul Bahar Basim , Serkan Kincal , Eugene C. Davis
IPC分类号： G06F19/00 , B24B49/00 , B24B51/00 , B24B1/00 , H01L21/302 , H01L21/461
CPC分类号： B24B53/017 , B24B49/10 , B24B49/16
摘要： A method of conditioning a CMP polishing pad to attain a desired thickness profile in a polished layer on a wafer is disclosed. The incoming thickness profile of the layer to be polished, the thickness profile of the polishing pad, a polish rate of layer as a function of pressure and the removal rate of polishing pad material by a conditioning block are used to compute a sweep pattern for the conditioning block which will produce a desired thickness profile on the polishing pad. The method may be applied to maintaining the desired profile on the polishing pad during the course of polishing multiple wafers. The pad profile may be adjusted to keep pressure between the pad and the wafer to a safe limit to reduce polishing defects.
摘要翻译： 公开了一种调节CMP抛光垫以在晶片上的抛光层中获得期望的厚度分布的方法。 被研磨层的入射厚度分布，抛光垫的厚度分布，作为压力的函数的层的抛光速率和由调节块的抛光垫材料的去除速率用于计算扫描图案 这将在抛光垫上产生所需的厚度分布。 该方法可以应用于在抛光多个晶片的过程中在抛光垫上保持期望的轮廓。 可以调节焊盘轮廓以将焊盘和晶片之间的压力保持在安全限度以减少抛光缺陷。
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2.发明申请Predictive Method to Improve within Wafer CMP Uniformity through Optimized Pad Conditioning 有权通过优化垫调节来提高晶圆CMP均匀性的预测方法公开(公告)号：US20100112900A1
公开(公告)日：2010-05-06
申请号：US12265242
申请日：2008-11-05
申请人： Gul Bahar Basim , Serkan Kincal , Eugene C. Davis
发明人： Gul Bahar Basim , Serkan Kincal , Eugene C. Davis
CPC分类号： B24B53/017 , B24B49/10 , B24B49/16
摘要： A method of conditioning a CMP polishing pad to attain a desired thickness profile in a polished layer on a wafer is disclosed. The incoming thickness profile of the layer to be polished, the thickness profile of the polishing pad, a polish rate of layer as a function of pressure and the removal rate of polishing pad material by a conditioning block are used to compute a sweep pattern for the conditioning block which will produce a desired thickness profile on the polishing pad. The method may be applied to maintaining the desired profile on the polishing pad during the course of polishing multiple wafers. The pad profile may be adjusted to keep pressure between the pad and the wafer to a safe limit to reduce polishing defects.
摘要翻译： 公开了一种调节CMP抛光垫以在晶片上的抛光层中获得期望的厚度分布的方法。 被研磨层的入射厚度分布，抛光垫的厚度分布，作为压力的函数的层的抛光速率和由调节块的抛光垫材料的去除速率用于计算扫描图案 这将在抛光垫上产生所需的厚度分布。 该方法可以应用于在抛光多个晶片的过程中在抛光垫上保持期望的轮廓。 可以调节焊盘轮廓以将焊盘和晶片之间的压力保持在安全限度以减少抛光缺陷。
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